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| MFE211 Datasheet, PDF (1/5 Pages) Digitron Semiconductors – N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS | |||
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DIGITRON SEMICONDUCTORS
MFE211 â MFE212
N-CHANNEL DUAL GATE SILICON NITRIDE
PASSIVATED MOS FIELD EFFECT TRANSISTORS
MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain Gate Voltage
Gate Current
Drain Current â Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Storage Channel Temperature Range
Junction Temperature Range
Lead Temperature, 1/16â from Seated Surface for 10 Seconds
Symbol
VDSX
VDG1
VDG2
IG1
IG2
ID
PD
PD
Tstg
TJ
TL
Value
20
35
35
±10
±10
50
360
2.4
1.2
8.0
-65 to +200
-65 to +175
300
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
OFF CHARACTERISTICS
Drain Source Breakdown Voltage
(ID = 10 µAdc, VG1S = VG2S = -4.0 Vdc)
Gate 1 â Source Breakdown Voltage (1)
(IG1 = ±10 mAdc, VG2S = VDS = 0)
Gate 2 â Source Breakdown Voltage (1)
(IG2 = ±10 mAdc, VG1S = VDS = 0)
V(BR)DSX
V(BR)G1SO
V(BR)G2SO
20
±6.0
±6.0
Gate 1 to Source Cutoff Voltage
(VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 20 µAdc)
MFE211
MFE212
VG1S(off)
-0.5
-0.5
Gate 2 to Source Cutoff Voltage
(VDS = 15 Vdc, VG1S = 0, ID = 20 µAdc)
MFE211
MFE212
VG2S(off)
-0.2
-0.2
Gate 1 Leakage Current
(VG1S = ±5.0 Vdc, VG2S = VDS = 0)
(VG1S = -5.0 Vdc, VG2S = VDS = 0, TA = 150°C)
IG1SS
-
-
Gate 2 Leakage Current
(VG2S = ±5.0 Vdc, VG1S = VDS = 0)
(VG2S = -5.0 Vdc, VG1S = VDS = 0, TA = 150°C)
IG2SS
-
-
ON CHARACTERISTICS
Zero-Gate Voltage Drain Current (2)
(VDS = 15 Vdc, VG1S = 0, VG2S = 4.0 Vdc)
IDSS
6.0
SMALL SIGNAL CHARACTERISTICS
Forward Transfer Admittance (3)
(VDS = 15 Vdc, VG2S = 4.0 Vdc, VG1S = 0, f = 1.0 kHz)
âªYfsâª
17
Reverse Transfer Capacitance
(VDS = 15 Vdc, VG2S = 4.0 Vdc, ID = 10 mAdc, f = 1.0 MHz)
Crss
0.005
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDD = 18 Vdc, VGG = 7.0 Vdc, f = 200 MHz)
MFE211
NF
-
(VDD = 24 Vdc, VGG = 6.0 Vdc, f = 45 MHz)
MFE212
-
Common Source Power Gain
(VDD = 18 Vdc, VGG = 7.0 Vdc, f = 200 MHz)
MFE211
Gps
24
(VDD = 18 Vdc, VGG = 6.0 Vdc, f = 45 MHz)
(VDD = 18 Vdc, fLO = 245 MHz, f RF = 200 MHz)
MFE211
MFE212
Gc(5)
29
21
Max
-
-
-
-5.5
-4.0
-2.5
-4.0
±10
-10
±10
-10
40
40
0.05
3.5
4.0
35
37
28
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
mAdc
µAdc
nAdc
µAdc
mAdc
mmhos
pF
dB
dB
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20120705
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