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MCR72 Datasheet, PDF (1/3 Pages) Motorola, Inc – Silicon Controlled Rectifiers
DIGITRON SEMICONDUCTORS
MCR72 SERIES
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open)
MCR72-1
25
MCR72-2
50
MCR72-3
MCR72-4
VDRM
100
V
VRRM
200
MCR72-5
300
MCR72-6
400
MCR72-7
500
MCR72-8
600
On-state RMS current (180° conduction angles, TC = 83°C)
IT(RMS)
8.0
A
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, TJ = 110°C)
Circuit fusing consideration (t = 8.3ms)
ITSM
100
A
I2t
40
A2s
Forward peak gate voltage (t ≤ 10µs, TC = 83°C)
VGM
±5.0
V
Forward peak gate current (t ≤ 10µs, TC = 83°C)
IGM
1.0
A
Forward peak gate power (pulse width ≤ 10µs, TC = 83°C)
PGM
5.0
W
Average gate power (t = 8.3ms, TC = 83°C)
PG(AV)
0.75
W
Operating junction temperature range
TJ
-40 to +110
°C
Storage temperature range
Tstg
-40 to +150
°C
Mounting torque
-
8.0
In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Lead solder temperature
(lead length 1/8” from case, 10s max)
Symbol
RÓ¨JC
RÓ¨JA
TL
Maximum
2.2
60
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak forward or reverse blocking current(2)
(VAK = Rated VDRM or VRRM, RGK = 1kΩ)
TC = 25°C
TC = 110°C
ON CHARACTERISTICS
IDRM,
IRRM
Peak forward on-state voltage
(ITM = 16A, pulse width ≤ 1ms, duty cycle ≤ 2%)
VTM
Gate trigger current (continuous dc)(3)
(VD = 12V, RL = 100Ω)
IGT
Gate trigger voltage (continuous dc) (3)
(VD = 12V, RL = 100Ω)
VGT
Min
-
-
-
-
-
Typ
-
-
1.7
30
0.5
Max
10
500
2.0
200
1.5
Unit
µA
V
µA
V
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130115