MCR70 Datasheet, PDF (1/4 Pages) Digitron Semiconductors – 35 AMP SILICON CONTROLLED RECTIFIER

DIGITRON SEMICONDUCTORS
MCR70 SERIES
MCR71 SERIES
35 AMP SILICON CONTROLLED RECTIFIER
55 AMP SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
MCR70
MCR71
Unit
Repetitive peak forward or reverse blocking voltage ⁽¹⁾
MCR70
1
MCR71
2
3
V_DRM/V_RRM
25
Volts
50
100
Peak discharge current ⁽²⁾
I_TM
850
1700
Amps
On-state current (T_C ≤ 75°C)
I_T(RMS)
I_T(AV)
35
55
Amps
22
35
Peak non-repetitive surge current
(1/2 cycle, sine wave, 60Hz, T_J = 125°C)
Circuit fusing (t = 8.3 ms)
I_TSM
350
550
Amps
I²t
510
1255
A²s
Critical rate of rise of current ⁽³⁾
di/dt
100
200
A/µs
Forward peak gate power (t ≤ 20µs)
P_GM
20
Watts
Forward average gate power
P_G(AV)
0.5
Watts
Forward peak gate current (t ≤ 20µs)
I_GM
2
Amps
Operating junction storage temperature range
T_J
-40 to +125
°C
Storage temperature range
T_stg
-40 to +150
°C
Mounting torque
-
30
In. lb.
1. The rated voltage can be applied over the rated operating junction temperatures without incurring damage. Ratings apply for shorted-open or shorted-gate conditions
or negative voltage on the gate. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltages.
2. Rating is for t_w = 1ms.
3. Test conditions: I_G = 150mA, V_D = Rated V_DRM, I_TM = Rated value, T_J = 125°C.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
R_Ó¨JC
Max
1
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Peak forward or reverse blocking current (rated V_DRM or V_RRM)
(T_J = 25°C)
(T_J = 125°C)
On-state voltage ⁽¹⁾
(I_TM = 70A)
(I_TM = 175A)
(I_TM = 850A, t_w = 1ms) ⁽²⁾
(I_TM = 1700A, t_w = 1ms) ⁽²⁾
MCR70 SERIES
MCR71 SERIES
MCR70 SERIES
MCR71 SERIES
Gate trigger current (continuous dc)
(V_D = 12V, R_L = 100Ω)
Gate trigger voltage (continuous dc)
(V_D = 12V, R_L = 100Ω)
(V_D = rated V_DRM, R_L = 1kΩ, T_J = 125°C)
Holding current (I_TM = 0.5A, gate open)
Latching current (V_D = 12Vdc, I_G = 150mA, t_r ≤ 50µs)
Critical rate of rise off state voltage
(V_D = rated V_DRM, gate open, exponential waveform, T_C = 125°C)
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Symbol
I_DRM, I_RRM
V_TM
I_GT
V_GT
I_H
I_L
dv/dt
Min
-
-
-
-
-
-
2
Typ
-
-
1.5
1.7
6
7
10
Max
10
2
1.85
2.1
-
-
30
Unit
µA
mA
Volts
mA
-
1
1.5
Volts
0.2
-
-
3
15
50
mA
-
30
60
mA
10
-
-
V/µs
[e-mail]
www.digitroncorp.com
Rev. 20130116