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MCR69 Datasheet, PDF (1/4 Pages) Digitron Semiconductors – SILICON CONTROLLED RECTIFIERS
DIGITRON SEMICONDUCTORS
MCR69 SERIES
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +125°C, gate open)
MCR69-1
MCR69-2
MCR69-3
VDRM
25
V
VRRM
50
100
Peak discharge current (2)
ITM
750
A
On-state RMS current (180° conduction angles, TC = 85°C)
IT(RMS)
25
A
Average on-state current (180° conduction angles, TC = 85°C)
IT(AV)
16
A
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, TJ = 125°C)
ITSM
300
A
Circuit fusing consideration (t = 8.3ms)
I2t
375
A2s
Forward peak gate current (pulse width ≤ 1.0µs, TC = 85°C)
IGM
2.0
A
Forward peak gate power (pulse width ≤ 1.0µs, TC = 85°C)
PGM
20
W
Forward average gate power (t = 8.3ms, TC = 85°C)
PG(AV)
0.5
W
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Mounting torque
-
8.0
In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Ratings apply for tw = 1ms.
Note 3: Test conditions: IG = 150mA, VD = rated VDRM, ITM = rated value, TJ = 125°C.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Lead solder temperature
(lead length 1/8” from case, 10s max)
Symbol
RÓ¨JC
RÓ¨JA
TL
Maximum
1.5
60
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TC = 25°C
TC = 125°C
IDRM,
IRRM
ON CHARACTERISTICS
Peak forward on-state voltage*
(ITM = 50A)(4)
VTM
(ITM = 750A, tw = 1ms)(5)
Gate trigger current (continuous dc)
(VAK = 12V, RL = 100Ω)
IGT
Gate trigger voltage (continuous dc)
(VAK = 12V, RL = 100Ω)
VGT
Gate non-trigger voltage
(VAK = 12V, RL = 100Ω, TJ = 125°C)
VGD
Min
-
-
-
-
2.0
-
0.2
Typ
Max
-
10
-
2.0
-
1.8
6.0
-
7.0
30
0.65
1.5
0.40
-
Unit
µA
mA
V
mA
V
V
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130115