MCR68 Datasheet, PDF (1/4 Pages) Digitron Semiconductors – SILICON CONTROLLED RECTIFIERS

DIGITRON SEMICONDUCTORS
MCR68 SERIES
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage⁽¹⁾
(T_J = -40 to +125°C, gate open)
MCR68-1
MCR68-2
MCR68-3
V_DRM
25
V
V_RRM
50
100
Peak discharge current ⁽²⁾
I_TM
300
A
On-state RMS current (180° conduction angles, T_C = 85°C)
I_T(RMS)
12
A
Average on-state current (180° conduction angles, T_C = 85°C)
I_T(AV)
8.0
A
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, T_J = 125°C)
Circuit fusing consideration (t = 8.3ms)
I_TSM
100
A
I²t
40
A²s
Forward peak gate current (pulse width ≤ 1.0µs, T_C = 85°C)
I_GM
2.0
A
Forward peak gate power (pulse width ≤ 1.0µs, T_C = 85°C)
P_GM
20
W
Forward average gate power (t = 8.3ms, T_C = 85°C)
P_G(AV)
0.5
W
Operating junction temperature range
T_J
-40 to +125
°C
Storage temperature range
T_stg
-40 to +150
°C
Mounting torque
-
8.0
In. lb.
Note 1: V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Ratings apply for t_w = 1ms,
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Maximum lead temperature for soldering
purposes 1/8” from case for 10s
Symbol
R_Ó¨JC
R_Ó¨JA
T_L
Maximum
2.0
60
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_J = 25°C, unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(V_AK = Rated V_DRM or V_RRM, gate open)
T_J = 25°C
T_J = 125°C
ON CHARACTERISTICS
I_DRM,
I_RRM
Peak forward on-state voltage
(I_TM = 24A)⁽³⁾
V_TM
(I_TM = 300A, t_w = 1ms)⁽⁴⁾
Gate trigger current (continuous dc)
(V_D = 12V, R_L = 100Ω)
I_GT
Gate trigger voltage (continuous dc)
(V_D = 12V, R_L = 100Ω)
V_GT
Gate non-trigger voltage
(V_D = 12V, R_L = 100Ω, T_J = 125°C)
V_GD
Min
-
-
-
-
2.0
-
0.2
Typ
Max
-
10
-
2.0
-
2.2
6.0
-
7.0
30
0.65
1.5
0.40
-
Unit
µA
mA
V
mA
V
V
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20130115