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MCR264-4 Datasheet, PDF (1/3 Pages) Motorola, Inc – Thyristors
DIGITRON SEMICONDUCTORS
MCR264-4 – MCR264-12
THYRISTORS
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage (1)
(TJ = 25 to 125°C, Gate Open)
MCR264-4
MCR264-6
MCR264-8
MCR264-10
MCR264-12
VDRM
VRRM
200
400
600
800
1000
Volts
Forward Current (TC = 80°C)
(All Conduction Angles)
Peak Non-Repetitive Surge Current – 8.3ms
(1/2 Cycle, Sine Wave)
1.5ms
IT(RMS)
IT(AV)
ITSM
40
Amps
25
400
Amps
450
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
(300µs, 120PPS)
PGM
PG(AV)
IGM
20
Watts
0.5
Watt
2
Amps
Operating Junction Temperature Range
TJ
-40 to +125
°C
Storage Temperature Range
Tstg
-40 to +150
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage
shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge conditions. Care must be taken to ensure proper heat sinking when the
device is to be used at high sustained currents.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
RθJC
RθJA
Max
1
60
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.
Characteristics
Symbol
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
Forward “On” Voltage (1)
(ITM = 80A)
TJ = 25°C
TJ = 125°C
IDRM, IRRM
VTM
Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms, TC = -40°C)
IGT
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
VGT
Gate Non-Trigger Voltage
(Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C)
VGD
Holding Current
(Anode Voltage = 12 Vdc)
IH
Turn-On Time
(ITM = 40 A, IGT = 60 mAdc)
tgt
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
dv/dt
Min
-
-
-
-
-
-
Typ
-
-
Max
10
2
Unit
µA
mA
1.4
2 Volts
15
50
mA
30
90
1
1.5 Volts
0.2
-
- Volts
-
30
60 mA
-
1.5
-
µs
-
50
- V/µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130108
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