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MCR25D Datasheet, PDF (1/4 Pages) ON Semiconductor – SILICON CONTROLLED RECTIFIERS
DIGITRON SEMICONDUCTORS
MCR25D, MCR25M, MCR25N
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage(1)
(TJ = -40 to +125°C, sine wave, 50 to 60Hz)
MCR25D
MCR25M
MCR25N
Symbol
VDRM
VRRM
Value
400
600
800
Unit
V
On-state RMS current (180° conduction angles, TC = 80°C)
IT(RMS)
25
A
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, TJ = 125°C)
Circuit fusing consideration (t = 8.3ms)
ITSM
300
A
I2t
373
A2s
Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C)
PGM
20
W
Forward average gate power (t = 8.3ms, TC = 80°C)
PG(AV)
0.5
W
Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C)
IGM
2.0
A
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Lead solder temperature
(lead length ≥ 1/8” from case, 10s max)
Symbol
RÓ¨JC
RÓ¨JA
TL
Maximum
1.5
62.5
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS start here
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Peak forward on-state voltage*
(ITM = 50A)
Gate trigger current (continuous dc)
(VD = 12V, RL = 100Ω)
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω)
Holding current
(VD = 12V, gate open, initiating current = 200mA)
Latching current
(VD = 12V, IG = 30mA)
DYNAMIC CHARACTERISTICS
IDRM,
IRRM
VTM
IGT
VGT
IH
IL
Critical rate of rise of off-state voltage
(VD = 67% of rated VDRM, exponential waveform, gate open,
TJ = 125°C)
Critical rate of rise of on-state current
(IPK = 50A, PW = 30µsec, diG/dt = 1A/µsec, Igt = 50mA)
* Pulse width ≤ 2.0ms, duty cycle ≤ 2%.
dv/dt
di/dt
Min
-
-
-
4.0
0.5
5.0
-
100
-
Typ
Max
-
0.01
-
2.0
-
1.8
12
30
0.67
1.0
13
40
35
80
250
-
-
50
Unit
mA
V
mA
V
mA
mA
V/µs
A/µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130108
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