MCR225-5 Datasheet, PDF (1/4 Pages) Digitron Semiconductors – SILICON CONTROLLED RECTIFIERS

DIGITRON SEMICONDUCTORS
MCR225-5, MCR225-7
MCR225-9, MCR225-12
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse off state voltage ⁽¹⁾
MCR225-5
MCR225-7
MCR225-9
MCR225-12
300
V_DRM, V_RRM
500
V
700
1000
On-state current RMS (all conduction angles; T_C = 85°C)
Average on-state current (all conduction angles; T_C = 85°C)
I_T(RMS)
25
A
I_T(AV)
16
A
Peak non-repetitive surge current (1/2 cycle, sine wave 60 Hz, t = 8.3ms)
I_TSM
300
A
Forward peak gate power
Forward average gate power
Forward peak gate current
P_GM
20
W
P_G(AV)
0.5
W
I_GM
2.0
A
Operating junction temperature range
T_J
-40 to +125
°C
Storage temperature range
T_stg
-40 to +150
°C
Note 1: V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction-to-case
Symbol
R_θJC
Max
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Peak repetitive forward or reverse blocking current
(V_AK = rated V_DRM or V_RRM, gate open)
ON CHARACTERISTICS
T_J = 25°C
T_J = 125°C
Forward on-state voltage ⁽²⁾ (I_TM = 50A)
Gate trigger current (continuous dc)
(V_AK = 12Vdc, R_L = 100Ω)
T_C = 25°C
T_C = -40°C
Gate trigger voltage (continuous dc) (V_AK = 12 Vdc, R_L = 100Ω, T_C = -40°C)
Gate non-trigger voltage (V_AK = rated V_DRM, R_L = 100Ω, T_J = 125°C)
Holding current
(V_AK = 12Vdc, T_C = -40°C)
Turn-on time (I_TM = 25A, I_GT = 50mAdc)
Turn-off time (V_DRM = rated voltage)
(I_TM = 25A, I_R = 25A)
(I_TM = 25A, I_R = 25A, T_J = 125°C)
DYNAMIC CHARACTERISTICS
Critical rate of rise of off state voltage
(Gate open, rated V_DRM, exponential waveform)
Note 2: Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
Symbol Min Typ Max Unit
I_DRM,
I_RRM
-
-
10
µA
-
- 2.0
mA
V_TM
-
- 1.8
V
-
-
40
I_GT
mA
- 25 75
V_GT
- 1.0 1.5
V
V_GD
0.2 -
-
V
I_H
mA
- 35 40
t_gt
- 1.5 2.0
µs
t_q
-
15
-
µs
-
35
-
dv/dt
-
50
-
V/µs
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fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20130128