English
Language : 

MCR218 Datasheet, PDF (1/3 Pages) Motorola, Inc – Thyristors(Silicon Controlled Rectifiers)
DIGITRON SEMICONDUCTORS
MCR218 SERIES
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage(1)
(TJ = -40 to +125°C, gate open)
MCR218-2
MCR218-3
MCR218-4
MCR218-6
MCR218-7
MCR218-8
MCR218-10
Symbol
VDRM
VRRM
Value
50
100
200
400
500
600
800
Unit
V
On-state RMS current (180° conduction angles, TC = 70°C)
IT(RMS)
8.0
A
Peak non-repetitive surge current
(one half-cycle, sine wave, 60Hz, TJ = 125°C)
Circuit fusing consideration (t = 8.3ms)
ITSM
100
A
I2t
26
A2s
Forward peak gate power (pulse width ≤ 1.0µs, TC = 70°C)
PGM
5
W
Forward average gate power (t = 8.3ms, TC = 70°C)
PG(AV)
0.5
W
Forward peak gate current (pulse width ≤ 1.0µs, TC = 70°C)
IGM
2.0
A
Operating temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Maximum lead temperature for soldering
purposes 1/8” from case for 10s
Symbol
RÓ¨JC
TL
Maximum
2.0
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Peak on-state voltage*
(ITM = 16A peak)
Gate trigger current (continuous dc)
(VD = 12V, RL = 100Ω)
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω)
Gate non-trigger voltage
(Rated 12V, RL = 100Ω, TJ = 125°C)
Holding current
(VD = 12V, initiating current = 200mA, gate open)
DYNAMIC CHARACTERISTICS
IDRM,
IRRM
VTM
IGT
VGT
VGD
IH
Critical rate of rise of off-state voltage
(VD = rated VDRM, exponential waveform, gate open, TJ = 125°C)
* Pulse width ≤ 1.0ms, duty cycle ≤ 2%.
dv/dt
Min
-
-
-
-
-
0.2
-
-
Typ
Max
-
10
-
2.0
1.5
1.8
10
25
-
1.5
-
-
16
30
100
-
Unit
µA
mA
V
mA
V
V
mA
V/µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130115
 ▷