MCR201 Datasheet, PDF (1/4 Pages) Digitron Semiconductors – SILICON CONTROLLED RECTIFIERS

DIGITRON SEMICONDUCTORS
MCR201-MCR206
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak off-state and reverse voltage
MCR201
MCR202
MCR203
MCR204
MCR205
MCR206
RMS on-state current (all conduction angles)
Peak non-repetitive forward surge current
(1/2 cycle, sine wave, 60Hz)
Circuit fusing considerations (t = 1.0 to 8.3ms)
Peak forward gate power
Average forward gate power
Peak forward gate current (300µs, 120PPS)
Peak reverse gate voltage
Operating junction temperature range @ V_RRM and V_DRM
Storage temperature range
Symbol
V_DRM, V_RRM
I_T(RMS)
I_TSM
I²t
P_GM
P_GF(AV)
I_GFM
V_GRM
T_J
T_stg
Value
15
30
60
100
150
200
0.5
6.0
0.15
0.1
0.01
1.0
4.0
-65 to 125
-65 to 150
Unit
Volts
Amp
Amp
A²s
Watt
Watt
Amp
Volts
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
ELECTRICAL CHARACTERISTICS (R_GK = 1000ohms)
Characteristic
Peak forward blocking current
Rated V_DRM @ T_C = 125°C
Peak reverse blocking current
Rated V_RRM @ T_C = 125°C
Peak on-state voltage
I_TM = 1.2A peak, 1ms, duty cycle ≤ 1%
Gate trigger current (continuous dc)⁽¹⁾
Anode voltage = 7.0Vdc, R_L = 100ohms)
T_C = 25°C
T_C = -65°C
Gate trigger voltage (continuous dc)
Anode voltage = 7.0Vdc, R_L = 100ohms)
T_C = 25°C
T_C = -65°C
T_C = 125°C
Holding current
Anode voltage = 7.0Vdc, initiating current = 20mA)
Note 1: R_GK current is not included in measurement.
T_C = 25°C
T_C = -65°C
Symbol
R_Ó¨JC
R_Ó¨JA
Max
150
400
Symbol
I_DRM
I_RRM
V_TM
I_GT
V_GT
I_H
Min
-
-
-
-
-
-
-
0.1
-
-
Max
100
100
1.7
200
350
0.8
1.2
-
5.0
10
Unit
°C/W
°C/W
Unit
µA
µA
Volts
µA
Volts
mA
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20130116