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MCR12LD Datasheet, PDF (1/4 Pages) Digitron Semiconductors – SILICON CONTROLLED RECTIFIERS
DIGITRON SEMICONDUCTORS
MCR12LD, MCR12LM, MCR12LN
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +125°C, sine wave, 50 to 60Hz, gate open)
MCR12LD
VDRM
400
V
MCR12LM
VRRM
600
MCR12LN
800
On-state RMS current (180° conduction angles, TC = 80°C)
IT(RMS)
12
A
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, TJ = 125°C)
Circuit fusing consideration (t = 8.3ms)
ITSM
100
A
I2t
41
A2s
Forward peak gate power (pulse width ≤ 1.0µs, TC = 80°C)
PGM
5.0
W
Forward average gate power (t = 8.3ms, TC = 80°C)
PG(AV)
0.5
W
Forward peak gate current (pulse width ≤ 1.0µs, TC = 80°C)
IGM
2.0
A
Operating temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Maximum lead temperature for soldering
purposes 1/8” from case for 10s
Symbol
RÓ¨JC
RÓ¨JA
TL
Maximum
2.2
62.5
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VD = Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
IDRM,
IRRM
Peak on-state voltage*
(ITM = 24A)
VTM
Gate trigger current (continuous dc)
(VD = 12V, RL = 100Ω)
IGT
Holding current
(VD = 12V, gate open, initiating current = 200mA)
IH
Latch current
(VD = 12V, Ig = 20mA)
IL
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω)
VGT
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
(VD = rated VDRM, exponential waveform, gate open, TJ = 125°C)
dv/dt
Critical rate of rise of on-state current
(IPK = 50A, Pw = 40µsec, diG/dt = 1A/µs, Igt = 50mA)
* Pulse width ≤ 1.0ms, duty cycle ≤ 2%.
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Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
di/dt
Min
Typ
Max
Unit
mA
-
-
0.01
-
-
2.0
V
-
-
2.2
mA
2.0
4.0
8.0
mA
4.0
10
20
mA
6.0
12
30
V
0.5
0.65
0.8
100
-
V/µs
250
-
A/µs
-
50
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www.digitroncorp.com
Rev. 20130108
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