MCR1000 Datasheet, PDF (1/4 Pages) Digitron Semiconductors – SILICON CONTROLLED RECTIFIERS

DIGITRON SEMICONDUCTORS
MCR1000 SERIES
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak forward reverse blocking voltage
MCR1000-4
MCR1000-6
MCR1000-8
Forward current RMS (all conduction angles, T_C = 25°C)
Peak forward surge current (1/2 cycle, sine wave, 60 Hz, T_J = 125°C)
Circuit fusing considerations (T_J = 0 to +125°C, t = 1 to 8.3ms)
Forward peak gate voltage
Forward peak gate current
Operating junction temperature range
Storage temperature range
Symbol
V_DRM,
V_RRM
I_T(RMS)
I_TSM
I²t
V_GM
I_GM
T_J
T_stg
Value
Unit
200
400
600
15
90
34
±20
1.5
0 to +125
-65 to +150
Volts
Amps
Amps
A²s
Volts
Amps
°C
°C
THERMAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Thermal resistance, junction to case
R_Ó¨JC
Maximum
1.67
Unit
°C/W
ELECTRICAL CHARACTERISTICS (R_GK = 1000Ω)
Characteristic
Peak forward blocking current
(Rated V_DRM @ T_J = 125°C)
Peak reverse blocking current
(Rated V_RRM @ T_J = 125°C)
Peak reverse blocking voltage
Forward “on” voltage (I_TM = 20A peak)
Gate trigger voltage (continuous dc)
(V_AK = 12Vdc, R_L = 100Ω)
(V_AK = Rated V_DRM, R_L = 100Ω, T_J = 125°C)
Holding current
(V_AK = 12Vdc)
Turn on time
See Figure 6
Turn off time (V_DRM = rated voltage)
(I_TM = 3.0A, I_R = 2.0A, dv/dt = 100V/µs)
Forward voltage application rate
(T_J = 125°C, R_GK ≤ 200Ω) (Figure 7)
Maximum rate of change of on state current
(Rated V_DRM, I_TM = 20A, T_J = 125°C)
Symbol Min Typ. Max
I_DRM
-
-
2.0
I_RRM
V_RRM
V_TM
-
-
2.0
-
- 100
-
3.5 4.0
V_GT
V_GD
I_H
t_gt
t_q
dv/dt
di/dt
-
2.0
0.2
-
-
10
-
-
-
6.0
1000 -
-
-
2.5
-
40
200
8.0
-
100
Unit
mA
mA
Volts
Volts
Volts
mA
ns
µs
V/µs
A/µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20130128