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| MBR1070 Datasheet, PDF (1/3 Pages) Sirectifier Semiconductors – Wide Temperature Range and High Tjm Schottky Barrier Rectifiers | |||
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DIGITRON SEMICONDUCTORS
MBR1070-MBR10200
10A SCHOTTKY RECTIFIER
MAXIMUM RATINGS
Rating
Symbol
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Average rectified forward current (rated VR)@ TC = 133°C
Peak repetitive forward current
(Rated VR, square wave, 20kHz), TC = 133°C
Non-repetitive peak surge current
(surge applied at rated load conditions halfwave, single phase,
60Hz)
Peak repetitive reverse surge current (2.0µs, 1.0kHz)
Operating junction temperature range
Storage temperature range
Voltage rate of change (rated VR)
Maximum thermal resistance
Junction to case
Junction to ambient
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
TJ
Tstg
dv/dt
RÓ¨JC
RÓ¨JA
1070
70
1080
MBR
1090
Unit
10100 10200
80
90
100
200
V
10
A
20
A
150
0.5
-65 to +150
-65 to +175
10,000
2.0
60
A
A
°C
°C
V/µs
°C/W
ELECTRICAL CHARACTERISTICS
Parameter
Maximum instantaneous forward voltage (1)
(IF = 10A, TC = 125°C)
(IF = 10A, TC = 25°C)
(IF = 20A, TC = 125°C)
(IF = 20A, TC = 25°C)
Maximum instantaneous reverse current (1)
(Rated dc voltage, TC = 125°C)
(Rated dc voltage, TC = 25°C)
Note 1: Pulse test: Pulse width = 300µs, duty cycle ⤠2.0%.
Symbol
1070
1080
MBR
1090
Unit
10100 10200
0.7
VF
0.8
V
0.85
0.95
IR
6.0
mA
0.10
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121128
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