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GA200 Datasheet, PDF (1/4 Pages) Microsemi Corporation – SCRs Nanosecond Switching, Planar
DIGITRON SEMICONDUCTORS
GA200-GA201A
SILICON CONTROLLED RECTIFIER
NANOSECOND SWITCHING
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Ratings
Repetitive peak off state voltage
Repetitive peak on state current
DC on state current
70°C ambient
70°C case
Peak gate current
Average gate current
Reverse gate current
Reverse gate voltage
Thermal resistance
Storage temperature range
Operating temperature range
Symbol
VDRM
ITRM
IT
IGM
IG(AV)
IGR
VGR
RÓ¨CA
Tstg
TJ
GA200
GA200A
60V
GA201
GA201A
GB200
GB200A
100V
60V
Up to 100A
GB201
GB201A
100V
200mA
400mA
250mA
25mA
3mA
5V
300°C/W
-65° to 200°C
-65° to 150°C
-
6A
250mA
50mA
3mA
5V
ELECTRICAL CHARACTERISTICS (@ 25°C unless otherwise noted)
Test
Symbol Min. Typ. Max. Units
Test Conditions
Delay time
td
Rise time (GA200, GA200A, GB200, GB200A)
tr
Rise time (GA201, GA201A, GB201, GB201A)
tr
-
20
30
ns
-
10
-
-
15
25
ns
-
25
-
-
10
20
ns
-
20
-
IG = 20mA, IT = 1A
IG = 30mA, IT = 1A
VD = 60V, IT = 1A(1)
VD = 60V, IT = 30A(1)
VD = 100V, IT = 1A(1)
VD = 100V, IT = 30A(1)
Gate trigger on pulse width
tpg(on)
-
0.02 0.05
µs
IG = 10mA, IT = 1A
Circuit commutated turn-off time
(GA200, GA201, GB200, GB201)
(GA200A, GA201A, GB200A, GB201A)
tq
-
0.8
2.0
µs
-
0.3
0.5
IT = 1A, IR = 1A, RGK = 1K
Off-state current
IDRM
-
0.01 0.1
µA
-
20
100
µA
VDRM = Rating, RGK = 1K
VDRM = rating, RGK = 1K, 150°C
Reverse current
IRRM
-
1.0
10
mA
VRRM = 30V, RGK = 1K(2)
Reverse gate current
IGR
-
0.01 0.1
mA
VGRM = 5V
Gate trigger current
IGT
-
10
200
µA
VD = 5V, RGS = 10K
Gate trigger voltage
0.4
0.6 0.75
V
VGT
0.10 0.20
-
V
VD = 5V, RGS = 100Ω, T = 25°C
T = 150°C
On-state voltage
VT
-
1.1
1.5
V
IT = 2A
Holding current
0.3
2.0
5.0
mA
IH
0.05 0.2
-
mA
VD = 5V, RGK = 1K, T = 25°C
T = 150°C
Off-state voltage - critical rate of rise
dv/dt
20
40
-
V/µS
VD = 30V, RGK = 1K
Note 1: IG = 10mA, Pulse test: Duty cycle < 1%.
Note 2: Pulse test intended to guarantee reverse anode voltage capability for pulse commutation. Device should not be operated in the reverse blocking mode on a continuous basis.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20120117
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