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D13T1 Datasheet, PDF (1/3 Pages) Digitron Semiconductors – PROGRAMMABLE UNIJUNCTION TRANSISTORS
DIGITRON SEMICONDUCTORS
D13T1-D13T2
PROGRAMMABLE UNIJUNCTION TRANSISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Power dissipation
PF
DC forward anode current
IT
DC gate current
IG
Repetitive peak forward current
100µs pulse width, 1.0% duty cycle
ITRM
20µs pulse width, 1.0% duty cycle
300
150
±20
1.0
2.0
Non-repetitive peak forward current
10µs pulse width
ITSM
5.0
Gate to cathode forward voltage
Gate to cathode reverse voltage
Gate to anode reverse voltage
Anode to cathode voltage (1)
Operating junction temperature range
Storage temperature range
Note 1: Anode positive: RGA = 1000ohms, Anode negative: RGA = open
VGKF
VGKR
VGAR
VAK
TJ
Tstg
40
-5.0
40
±40
-50 to 100
-55 to 150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Peak current
(VS = 10Vdc, RG = 1.0MΩ)
(VS = 10Vdc, RG = 10kΩ)
D13T1
-
-
D13T2
IP
-
-
D13T1
-
-
D13T2
-
-
Off set voltage
(VS = 10Vdc, RG = 1.0MΩ)
(VS = 10Vdc, RG = 10kΩ)
Valley current
(VS = 10Vdc, RG = 1.0MΩ)
(VS = 10Vdc, RG = 10kΩ)
(VS = 10Vdc, RG = 200Ω)
D13T1
0.2
-
D13T2
VT
0.2
-
(both)
0.2
-
D13T1
-
-
D13T2
-
-
D13T1
IV
70
-
D13T2
25
-
D13T1
1.5
-
D13T2
1.0
-
Gate to anode leakage current
(VS = 40Vdc, TA = 25°C, cathode open)
(VS = 40Vdc TA = 75°C, cathode open)
Gate to cathode leakage current
(VS = 40Vdc, anode to cathode shorted)
Forward voltage
(IF = 50mA peak)
Peak output voltage
Pulse voltage rise time
IGAO
-
-
-
-
IGKS
-
-
VF
-
-
VO
6.0
-
tr
-
-
Unit
mW
mA
mA
Amp
Amp
Volts
Volts
Volts
Volts
°C
°C
Max
2.0
0.15
5.0
1.0
1.6
0.6
0.6
50
25
-
-
-
-
10
100
100
1.5
-
80
Unit
µA
Volts
µA
mA
nA
nAdc
Volts
Volts
ns
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130115
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