C180A Datasheet, PDF (1/4 Pages) Powerex Power Semiconductors – Phase Control SCR 150 Amperes Avg 100-1300 Volts

DIGITRON SEMICONDUCTORS
C180A-C180PC
150A PHASE CONTROL SCR
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Characteristics
RMS on-state current
Average on-state current
Peak one-cycle surge (non-repetitive) on-state current (60Hz)
Peak one-cycle surge (non-repetitive) on-state current (50Hz)
Critical rate of rise of on-state current (non-repetitive)
Critical rate of rise of on-state current (repetitive)
I²t (for fusing), 8.3 ms
Peak gate power dissipation
Average gate power dissipation
Storage temperature
Operating temperature
Mounting torque
Mounting torque
Symbol
I_T(RMS)
I_T(AV)
I_TSM
I_TSM
di/dt
di/dt
I²t
P_GM
P_G(AV)
T_stg
T_J
C180
235
150
3500
3200
800
150
50,800
10
2
-40 to +150
-40 to +125
250 to 300
28 to 34
Units
A
A
A
A
A/µs
A/µs
A²s
W
W
°C
°C
In.-lb.
N-m
VOLTAGE RATINGS
Characteristics
C180A
Working peak
reverse voltage
100
C180B
200
C180C
300
C180D
400
C180E
500
C180N
600
C180S
700
C180M
800
C180T
900
C180P
1000
C180PA C180PB C180PC
1100
1200
1300
ELECTRICAL AND THERMAL CHARACTERISTICS
Characteristics
Symbol
Test Conditiions
Voltage – Blocking State Maximums
Forward leakage, peak
I_DRM
T_J = 125°C, V_DRM = Rated
Reverse leakage, peak
I_RRM
T_J = 125°C, V_RRM = Rated
Current – Conducting State Maximums
Peak on-state voltage
V_TM
T_J = 25°C, I_TM = 1500A
Switching
Typical turn-off time
t_q
I_T = 150A, T_J = 125°C, di_R/dt = 12.5A/µsec, reapplied
dv/dt = 20V/µsec, linear to 0.8V_DRM, V_R = 50V
Typical delay time
t_d
I_T = 100A, V_DRM = Rated, gate supply = 10V open ckt,
25Ω, 0.1 µsec rise time
Minimum critical dv/dt exponential to V_DRM
dv/dt
T_J = 125°C, gate open
Thermal
Maximum thermal resistance, junction to case
R_θJC
Case to sink, lubricated
R_θCS
Gate – Maximum Parameters
Gate current to trigger
I_GT
T_C = 25°C, V_D = 6Vdc, R_L = 3Ω
Gate voltage to trigger
Non-triggering gate voltage
V_GT
V_GDM
T_C = -40 to +125°C, V_D = 6Vdc, R_L = 3Ω
T_J = 125°C, Rated V_DRM, R_L = 1000Ω
Peak forward gate current
I_GTM
Peak reverse gate voltage
V_GRM
C180
20
20
2.85
100
1.0
200
.14
0.075
150
3.0
0.15
10
5
Units
mA
mA
V
µsec
µsec
V/µsec
°C/W
°C/W
mA
V
V
A
V
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20130116