C147A Datasheet, PDF (1/5 Pages) Digitron Semiconductors – HIGH POWER SILICON CONTROLLED RECTIFIER

DIGITRON SEMICONDUCTORS
C147A-C147PB
HIGH POWER SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Repetitive peak off-state
voltage
Part number
V_DRM¹
T_J = -40° to 125°C
C147A
100
C147B
200
C147C
300
C147D
400
C147E
500
C147M
600
C147S
700
C147N
800
C147T
900
C147P
1000
C147PA
1100
C147PB
1200
1: Pulse width: half sine wave waveform, 10 msec.
Repetitive peak
reverse voltage
V_RRM¹
T_J = -40°C to
125°C
100
200
300
400
500
600
700
800
900
1000
1100
1200
Non-repetitive peak
reverse voltage
V_RSM¹
T_J = 125°C
150
300
400
500
600
720
840
960
1080
1200
1320
1440
Units
V
V
V
V
V
V
V
V
V
V
V
V
Rating
Symbol
Value
RMS on-state current
(All conduction angles)
I_T(RMS)
63
Average on-state current
I_T(AV)
Figures 2 and 3
Critical rate of rise of on-state current (non-repetitive)
Switching from 1200V
Switching from 600V
100
di/dt
200
Peak one cycle surge (non-repetitive) on-state current
60Hz
I_TSM
50Hz
1000
910
Fusing
Times ≥ 8.3ms
Times ≥ 1.5ms
I²t
4150
2850
Peak gate power dissipation for 150µs
P_GM
100
Average gate power dissipation
Storage temperature
Operating temperature
P_G(AV)
T_stg
T_J
2
-40 to 150
-40 to 125
Maximum stud torque
3-4
di/dt ratings for conditions of V_DRM stated above; 20V, 20Ω gate trigger source with 0.5µsec short circuit trigger current rise time.
Unit
A
A/µs
A
A²s
W
W
°C
°C
N-m
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20130116