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| C122 Datasheet, PDF (1/4 Pages) Solid States Devices, Inc – 8-A Silicon Controlled Rectifiers | |||
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DIGITRON SEMICONDUCTORS
C122 SERIES
8A SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as âHRâ (high reliability) screened per MIL-PRF-19500, JANTX level. Add âHRâ suffix to base part number.
MAXIMUM RATINGS
Characteristics
VRROMU VDROMU
IT(RMS) (TC = 75°C, θ = 180°)
ITSM for one full cycle of applied principal voltage
400 Hz
C122F
50
C122A
100
C122B
200
C122C
300
8
200
C122D
400
60 Hz
100
50 Hz
85
di/dt
I2t
VD = VDROM, IGT = 80mA, tr = 0.5µs
TJ = -65 to +100°C, t = 1 to 8.3 ms
PGM * (for 10µs max)
PG(AV) * (averaging time = 10 ms max)
Tstg
TC
TT During soldering for 10 s maximum
U These values do not apply if there is a positive gate signal. Gate must be open or negatively biased.
* Any values of peak gate current or peak gate voltage which result in equal or lower power are permissible.
100
40
16
0.5
-65 to +150
-65 to +100
250
ELECTRICAL CHARACTERISTICS
Characteristics
IDOM or IROM
VD = VDROM or VR = VRROM, TC = 100°C
VT
IT = 16A, TC = 25°C
IGT
VD = 12V (DC), RL = 30Ω, TC = 25°C
VGT
VD = 12V (DC), RL = 30Ω, TC = 25°C
IHO
TC = 25°C
dv/dt
VD = VDROM exponential voltage rise, TC = 100°C
tgt
VD = VDROM, IT = 4.5A, IT = 2A, IGT = 80mA, 0.1 µs rise time,
TC = 25°C
tq
VD = VDROM, IT = 2A, tp = 50µs, dv/dt = 200V/µs,
di/dt = -10A/µs, IGT = 200mA @ tON, TC = 75°C
RθJC
RθJA
Min
-
-
-
-
-
10
-
-
-
-
Limits
Typ
0.1
1.45
10
1.0
20
100
1.6
10
-
-
Max
0.5
1.83
15
1.5
30
-
2.5
35
1.8
75
C122E
500
C122M
600
Units
V
A
A
A/µs
A2s
W
W
°C
°C
°C
Units
mA
V
mA
V
mA
V/µs
µs
µs
°C/W
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130123
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