C106 Datasheet, PDF (1/3 Pages) Motorola, Inc – SCRs 4 AMPERES RMS 50 thru 600 VOLTS

DIGITRON SEMICONDUCTORS
C106 SERIES
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage⁽¹⁾
(R_GK = 1kΩ, T_J = -40 to +110°C)
C106Q
C106Y
C106F
C106A
C106B
C106C
C106D
C106E
C106M
V_RRM, V_DRM
15
30
50
100
Volts
200
300
400
500
600
Forward current RMS (all conduction angles)
Average forward current (T_A = 30°C)
I_T(RMS)
I_T(AV)
4
2.55
Amps
Amps
Peak non-repetitive surge current
(1/2 cycle, 60Hz, T_J = -40 to +110°C)
Circuit fusing considerations
(t = 8.3ms)
I_TSM
Amps
20
I²t
A²s
1.65
Peak gate power
P_GM
0.5
Watts
Average gate power
Forward peak gate current
Peak reverse gate voltage
P_G(AV)
I_GFM
V_GRM
0.1
Watts
0.2
Amps
6
Volts
Operating junction temperature range
T_J
-40 to +110
°C
Storage temperature range
T_stg
-40 to +150
°C
Mounting torque⁽²⁾
6
In. lb.
Note 1: V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Torque rating applies with use of compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and
heatsink contact pad are common. Soldering temperature shall not exceed 200°C. For optimum results, an activated flux is recommended.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R_Ó¨JC
R_Ó¨JA
Maximum
3
75
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C)
Characteristic
Peak forward or reverse blocking current
(V_AK = rated V_DRM or V_RRM, R_GK = 1kΩ)
T_J = 25°C
T_J = 110°C
Forward “on” voltage
(I_FM = 1A peak)
Gate trigger current (continuous dc)
(V_AK = 6Vdc, R_L = 100Ω)
(V_AK = 6Vdc, R_L = 100Ω, T_C = -40°C)
Gate trigger voltage (continuous dc)
(V_AK = 6Vdc, R_L = 100Ω)
(V_AK = 6Vdc, R_L = 100Ω, T_C = -40°C)
Symbol
Min.
Typ.
Max.
I_DRM, I_RRM
V_TM
I_GT
V_GT
-
-
-
-
-
-
-
30
-
75
0.4
0.60
0.5
0.75
10
100
2.2
200
500
0.8
1.0
Unit
µA
Volts
µA
Volts
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20130118