BYV28-50 Datasheet, PDF (1/3 Pages) General Semiconductor – GLASS PASSIVATED FAST EFFICIENT RECTIFIER

DIGITRON SEMICONDUCTORS
BYV28-50 – BYV28-600
ULTRA FAST SILICON RECTIFIERS
MAXIMUM RATINGS (T_J = 25°C unless otherwise specified)
Parameter
Test Condition
Part
BYV28-50
BYV28-100
BYV28-150
Peak reverse voltage, non-repetitive
BYV28-200
BYV28-300
BYV28-400
BYV28-500
BYV28-600
BYV28-50
BYV28-100
BYV28-150
Reverse voltage = repetitive peak reverse
voltage
BYV28-200
BYV28-300
BYV28-400
BYV28-500
BYV28-600
Peak forward surge current
t_p = 10ms, half-sine wave
Repetitive peak forward current
Average forward current
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
I_(BR)R = 0.6A, T_J = 175°C
Junction and storage temperature range
Junction ambient
l = 10mm, T_L = constant
On PC board with spacing
37.5 mm
Symbol
V_RSM
V_R = V_RRM
I_FSM
I_FRM
I_FAV
E_R
T_J, T_STG
R_thJA
R_thJA
Value
55
110
165
220
330
440
560
675
50
100
150
200
300
400
500
600
90
25
3.5
Unit
V
V
A
A
A
20
mJ
-65 to +175 °C
25
K/W
70
K/W
ELECTRICAL CHARACTERISTICS (T_J = 25°C)
Parameter
Test Condition
Forward voltage
I_F = 5A
I_F = 5A, T_J = 175°C
Reverse current
V_R = V_RRM
V_RSM
V_R = V_RRM, T_J = 165°C
Reverse recovery time
I_F = 0.5A, I_R = 1A, i_R = .25A
Symbol
V_F
I_R
t_rr
Min
Typ
Max
1.1
0.89
1
100
150
30
Unit
V
µA
ns
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Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20121211