BTC12 Datasheet, PDF (1/4 Pages) Digitron Semiconductors – SILICON BIDIRECTIONAL THYRISTORS

DIGITRON SEMICONDUCTORS
BTC12 SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage⁽¹⁾
(T_J = 125°C)
BTC12-200
BTC12-400
BTC12-600
V_DRM
200
Volts
400
600
RMS on-state current (T_C = 70°C)
Peak non-repetitive surge current
(1 cycle, 50 Hz, t = 20ms)
(1/2 cycle, 50Hz, t = 10ms)
Circuit fusing considerations (T_J = -40 to 125°C , t = 10ms)
I_T(RMS)
I_TSM
I²t
12
Amps
90
Amps
100
40
A²s
Peak gate power (pulse width = 2.0µs)
P_GM
16
Watts
Average gate power (t = 10ms)
Peak gate current (pulse width = 1.0µs)
Operating junction temperature range
Storage temperature range
P_G(AV)
I_GM
T_J
T_stg
0.35
4.0
-40 to +125
-40 to +150
Watts
Amps
°C
°C
Maximum rate of change of on-state current
(I_TM = 12A, I_G = 200mA)
di/dt
A/µs
10
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
R_Ó¨JC
Maximum
2.2
Unit
°C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Peak blocking current (either direction)
(Rated V_DRM @ T_J = 125°C, gate open)
Peak on-state voltage (either direction)
(I_TM = 17A peak)
Peak gate trigger voltage
(main terminal voltage = 12V, R_L = 100Ω)
All quadrants
(main terminal voltage = rated V_DRM, R_L = 1kΩ, T_J = 125°C)
All quadrants
Holding current (either direction)
(main terminal voltage= 12V, gate open, initiating current = 1.0A, T_C = 25°C)
Latching current
(main terminal voltage = 24V, gate trigger source = 15V, 100Ω)
MT2(+), G(+)
MT2(-), G(-)
MT2(+), G(-)
Critical rate of rise of off state voltage
(Rated V_DRM, exponential voltage rise, gate open, T_J = 125°C)
Blocking voltage application rate
(@ T_C = 80°C @ V_DRM, I_T = 6A, gate open, commutation di/dt = 4.3A/ms)
Symbol Min
I_DRM
-
V_TM
-
Typ.
-
1.4
Max
2.0
1.65
Unit
mA
Volts
V_GTM
-
-
2.5 Volts
0.2
-
-
I_H
mA
-
-
50
I_L
-
-
100
mA
-
-
100
-
-
200
dv/dt
100
-
V/µs
-
dv/dt(c)
V/µs
5
-
-
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Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20130204