BTC05 Datasheet, PDF (1/4 Pages) Digitron Semiconductors – SILICON BIDIRECTIONAL THYRISTORS

DIGITRON SEMICONDUCTORS
BTC05-()A SERIES
BTC05-()B SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage⁽¹⁾
(T_J = 110°C)
BTC05-50A,B
BTC05-100A,B
BTC05-200A,B
BTC05-400A,B
BTC05-600A,B
V_DRM
50
100
Volts
200
400
600
RMS on-state current (T_C = 80°C)
I_T(RMS)
5
Amps
Peak non-repetitive surge current
(1 cycle, 60 Hz, T_J = -40 to 110°C)
Circuit fusing considerations (T_J = -40 to 110°C , t = 10ms)
Peak gate power
I_TSM
Amps
30
I²t
4.5
A²s
P_GM
10
Watts
Average gate power
P_G(AV)
0.5
Watts
Peak gate voltage
V_GM
5.0
Volts
Operating junction temperature range
T_J
-40 to +110
°C
Storage temperature range
T_stg
-40 to +150
°C
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
Note 2: Soldering temperatures shall not exceed +200°C for 10 seconds.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R_Ó¨JC
R_Ó¨JA
Maximum
3
60
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Peak blocking current (either direction)
(Rated V_DRM @ T_J = 110°C, gate open)
Peak on-state voltage (either direction)
(I_TM = 5.0A peak)
Peak gate trigger voltage
(main terminal voltage = 12V, R_L = 100Ω)
MT2(+), G(+); MT2(+), G(-); MT2(-), G(-)
MT2(-), G(+)
(main terminal voltage = rated V_DRM, R_L = 10kΩ, T_J = 110°C)
All quadrants
Holding current (either direction)
(main terminal voltage= 12V, gate open, initiating current = 1.0A, T_J = 25°C)
BTC05-()A SERIES
BTC05-()B SERIES
Turn on time (either direction)
(I_TM = 14A, I_GT = 100mA)
Blocking voltage application rate at commutation
(@ V_DRM, gate open)
Symbol Min
I_DRM
-
V_TM
-
Typ.
-
-
Max
2.0
1.8
Unit
mA
Volts
-
-
2.2
V_GTM
-
Volts
-
2.5
0.2
-
-
I_H
mA
-
-
10
-
-
5.0
t_on
µs
-
1.5
-
dv/dt
V/µs
-
50
-
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20130204