BRY55 Datasheet, PDF (1/2 Pages) Motorola, Inc – SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS

DIGITRON SEMICONDUCTORS
BRY55 SERIES
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage⁽¹⁾
(R_GK = 1000Ω, T_J = 25-125°C)
BRY55-30
BRY55-60
BRY55-100
BRY55-200
BRY55-400
BRY55-500
BRY55-600
V_RRM, V_DRM
30
60
100
Volts
200
400
500
600
Forward current RMS (all conduction angles)
I_T(RMS)
0.8
Amps
Peak forward surge current, T_A = 25°C
(1/2 cycle, sine wave, 60Hz)
I_TSM
Amps
8
Circuit fusing considerations, T_A = 25°C
(t = 8.3ms)
I²t
A²s
0.15
Forward peak gate power, T_A = 25°C
P_GM
0.1
Watts
Forward peak gate current , T_A = 25°C (300µs, 120 PPS)
I_GFM
Operating junction temperature range @ rated V_RRM and V_DRM
T_J
Storage temperature range
T_stg
1
-40 to +125
-40 to +150
Amps
°C
°C
Lead solder temperature (<1.5mm from case, 10s max)
+230
°C
Note 1: V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R_Ó¨JC
R_Ó¨JA
Maximum
75
200
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T_C 25°C, R_GK = 1000Ω unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
Peak forward blocking current
(V_D = rated V_DRM @ T_C = 125°C)
I_DRM
µA
-
100
Peak reverse blocking current
(V_R = rated V_RRM @ T_C = 125°C)
Forward “on” voltage⁽²⁾
I_TM = 1A peak @ T_A = 25°C)
Gate trigger current (continuous dc)⁽³⁾
(Anode voltage = 7Vdc, R_L = 100 Ω)
Gate trigger voltage (continuous dc)
(Anode voltage = 7Vdc, R_L = 100 Ω)
(Anode voltage = rated V_DRM, R_L = 100 Ω)
T_C = 25°C
T_C = -40°C
T_C = 125°C
I_RRM
µA
-
100
V_TM
-
1.7
Volts
I_GT
µA
-
200
V_GT
-
0.8
Volts
-
1.2
0.1
-
Holding current
(Anode voltage = 7Vdc, initiating current = 20mA)
T_C = 25°C
I_H
T_C = -40°C
Note 2: Forward current applied for 1ms maximum duration, duty cycle ≤ 1%.
Note 3: R_GK current is not included in measurement.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
mA
-
5
-
10
[e-mail]
www.digitroncorp.com
Rev. 20130117