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| BR103 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – SILICON MINIATURE THYRISTOR | |||
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DIGITRON SEMICONDUCTORS
BR103
SILICON PLANAR THYRISTOR
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as âHRâ (high reliability) screened per MIL-PRF-19500, JANTX level. Add âHRâ suffix to base part number.
MAXIMUM RATINGS (TJ = -40 to +125°C, RGK = 1000 â¦)
Rating
Negative and positive repetitive peak off state voltage
Maximum RMS on-state current
Surge on state current, sinusoidal pulse (tp< 10ms)
Repetitive surge on-state current at tp = 6µs and f = 40kHz sine
Peak gate forward current
Repetitive reverse gate voltage
Storage and junction temperature range
Average gate power dissipation
Peak gate power dissipation
Symbol
VRR/VDR
IT(RMS)
ITSM
IT
IGFP
V(KG)R
Tstg, TJ
PG(AV)
PGP
Value
30
0.8
6
2
0.5
6
-40 to +125
0.01
0.1
Unit
V
A
A
A
A
V
°C
W
W
ELECTRICAL CHARACTERISTICS (Tcase = 25°C)
Characteristic
STATIC CHARACTERISTICS
Continuous reverse blocking and off state current
(RGK = 1kâ¦)
(TJ = 125°C)
Holding current
(RGK = 1kâ¦)
(TJ = -40°C)
On-state voltage
(ITS = 1A, tp = 1ms)
Gate trigger current
(VAK = 6V, RL = 100â¦)
(TJ = 0°C)
Gate trigger voltage
(VAK = 6V, RL = 100â¦, RGT = 1kâ¦, TJ = 0°C)
Gate non-trigger forward voltage
(VD = VDR, RGK = 1kâ¦, TJ = 125°C)
Critical rate of voltage rise
(RGK = 1kâ¦, TJ = 125°C, VAK = 10V)
Turn-off time
(ITS(rectangular) = 1A, tp = 50µs)
Turn-on time
(VD = VDR, RL = 100â¦, RGK = 1kâ¦, IGTS = 1.4mA, tp = 5µs,
tr = 40ns)
Symbol
IR/ID
IH
VT
IGT
VGT
VGF
dv/dt
tq
ton
Value
<2
<50
<3
<4
<1.5
<200
<250
<0.9
>0.1
10
<6
1.2
Unit
µA
mA
V
µA
V
V
V/µs
µs
µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130118
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