3N204 Datasheet, PDF (1/2 Pages) Motorola, Inc – 6367254 MOTOROLA SC (XSTRS/R F)

DIGITRON SEMICONDUCTORS
3N204-3N205
DUAL GATE MOSFET
MAXIMUM RATINGS
RATING
Drain-Source Voltage
Drain-Gate Voltage
Drain Current
Reverse Gate Current
Forward Gate Current
Total Device Dissipation @ T_A=25°C
Derate above 25°C
Lead Temperature
Operating and Storage Junction Temperature Range
SYMBOL
V_DS
V_DG
l_D
l_G
l_GF
P_D
T_L
T_J, T_stg
VALUE
25
30
50
-10
10
360
2.4
300
-65 to +175
UNIT
Vdc
Vdc
mA
mA
mA
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
CHARACTERISTIC
SYMBOL
MIN
MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(l_D=10μA, V_G1=V_G2=-5.0V)
Gate 1-Source Breakdown Voltage
(l_G1=+/- 10 mA) _{Note 1}
Gate 2-Source Breakdown Voltage
(l_G2=+/-10mA) _{Note 1}
Gate 1 Leakage Current
(V_G1S=+/-5.0V, V_G2S=V_DS=0)
Gate 2 Leakage Current
(V_G2S=+/-5.0V, V_G1S=V_DS=0)
Gate 1 to Source Cutoff Voltage
(V_DS=15V, V_G2S=4.0V, l_D=20μA)
Gate 2 to Source Cutoff Voltage
(V_DS=15V, V_G1S=0V, l_D=20μA)
V_(BR)DSX
V_(BR)G1SO
V_(BR)G2SO
l_G1SS
l_G2SS
V_G1S(off)
V_G2S(off)
25
+/-6
+/-6
-
-
-0.5
-0.2
-
+/-30
+/-30
+/-10
+/-10
-4.0
-4.0
Vdc
Vdc
Vdc
nA
nA
Vdc
Vdc
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current *
(V_DS=15V, V_G2S=4.0V, V_G1S=0V)
SMALL SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(V_DS=15V, V_G2S=4.0V, V_G1S=0V, f=1.0kHz) _{Note 2}
Input Capacitance
(V_DS=15V, V_G2S=4.0V, l_D=l_DSS, f=1.0Mhz)
Reverse Transfer Capacitance
(V_DS=15V, V_G2S=4.0V, l_D=10mA, f=1.0MHz)
Output Capacitance
(V_DS=15V, V_G2S=4.0V, l_D=l_DSS, f=1.0MHz)
l_DSS*
│Y_fs│
Ciss
Crss
Coss
6
30
10
0.005
TYP.3.0
TYP. 1.4
22
0.03
mA
mmhos
pF
pF
pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(V_DD=18V, V_GG=7.0V, f=200MHz)
3N204
NF
-
(V_DS=15V, V_G2S=4.0v, l_D=10mA, f=450MHZ) 3N204
-
3.5
dB
5.0
Common Source Power Gain
(V_DD=18V, V_GG=7.0V, f=200MHz)
3N204
G_ps
20
(V_DS=15V, V_G2S=4.0V, l_D=10mA, f=450MHz) 3N204
14
28
dB
-
Bandwidth
(V_DD=18V, V_GG=7.0V, f=200MHz)
3N204
BW
7.0
(V_DD=18V, f_LO=245MHz, f_RF=200MHz)_{Note 4}
3N205
4.0
12
MHz
7.0
Gain Control Gate Supply Voltage_{(Note 3)}
(V_DD=18V, UGPS=300dB,f=200MHz)
3N204
V_GG(GC)
0
-2.0
Vdc
Conversion Gain _{(Note 4)}
(V_DD=18V, f_LO=245MHz, f_RF=200MHz)
3N205
G_(conv.)
17
28
dB
*PW=30μs, Duty Cycle ≤ 2.0%.
1) All gate breakdown voltages are measured while the device is conducting rated gate current. This insures that the gate voltage limiting network is functioning properly.
2) This parameter must be measured with bias voltages applied for less than five (5) seconds to avoid overheating.
3) UG_ps is defined as the change in G_ps from the value at V_GG=7.0V.
4) Amplitude at input from local oscillator is 3 volts RMS.
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Rev. 20120705