2N877 Datasheet, PDF (1/5 Pages) New Jersey Semi-Conductor Products, Inc. – SCR, V(DRM) < 50 V

DIGITRON SEMICONDUCTORS
2N877-2N881, 2N885-2N889
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Peak forward blocking voltage
Part number
V_FXM
T_J = -65° to 125°C
R_GK = 1000 ohms maximum
Working and repetitive peak
reverse voltage
V_ROM(wkg) and V_ROM(rep)
Non-repetitive peak reverse voltage
V_ROM(non-rep) < 5 milliseconds
T_J = -65° to 150°C
T_J = -65° to 125°C
Units
2N877, 2N885
30
30
45
V
2N878, 2N886
60
60
90
V
2N879, 2N887
100
100
130
V
2N880, 2N888
150
150
200
V
2N881, 2N889
200
200
275
V
Rating
Peak forward voltage
RMS on-state current
Peak one cycle surge (non-repetitive) on-state current
Peak forward gate power dissipation
Average forward gate power dissipation
Peak gate voltage, forward and reverse
Storage temperature
Operating temperature
ELECTRICAL CHARACTERISTICS
Characteristic
Forward blocking current
Symbol
2N877-2N881
I_FX
2N885-2N889
Reverse blocking current
2N877-2N881
I_RX
2N885-2N889
Reverse gate current
Peak on-state voltage
Holding current
2N877-2N881
2N885-2N889
Critical rate of rise of applied forward voltage
Turn-on time
(Delay time + rise time)
I_GRM
V_FM
I_H
dv/dt
t_d + t_r
Circuit commutated turn-off time (all types)
t_off
Symbol
V_F(pk)
I_T(RMS)
I_FM
P_GM
P_G(AV)
V_GFM, V_GRM
T_stg
T_J
Min Typ
-
0.03
-
10
-
0.03
-
10
-
0.1
-
10
-
0.1
-
10
-
1
-
1.3
0.4
1.7
0.4
1.1
-
40
-
1.0
-
15
Max
10
100
1
20
10
100
1
20
10
1.9
5.0
3.0
-
-
-
Value
300
0.5
7.0
0.1
0.01
6.0
-65 to 150
-65 to 150
Unit
V
A
A
W
W
V
°C
°C
Units
µAdc
µAdc
µAdc
V
Test Condition
V_FX = rated V_FXM, R_GK = 1000ohms
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
V_RX = rated V_ROM(rep)
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
V_GRM = 2V, T_J = 25°C
T_J = 25°C, I_FX = 1A, single, half sinewave
pulse, 2.0ms wide max.
T_J = 25°C, R_GK = 1000ohms, V_FX = 24V dc
mAdc
V/µs
µs
µs
T_J = 125°C, R_GK = 1000ohms, V_FXM = rated
V_FXM
T_J = 25°C, V_FX = rated V_FXM, I_FM = 1A, gate
supply: 6V, 300ohms
T_J = 125°C, R_GK = 1000ohms, I_FM = 1A,
I_R(recovery) = 1A, reapplied V_FXM = rated,
rate of rise of reapplied forward blocking
voltage = 20V/µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20130123