2N6504 Datasheet, PDF (1/4 Pages) ON Semiconductor – Silicon Controlled Rectifiers

DIGITRON SEMICONDUCTORS
2N6504 SERIES
SILICON CONTROLLED RECTIFIERS
REVERSE BLOCKING THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS T_J = 25°C unless otherwise noted
Rating
Symbol
Value
Unit
Peak repetitive off state voltage ⁽¹⁾
(Gate open, sine wave 50 to 60 Hz, T_J = 25° to 125°C)
2N6504
50
2N6505
100
2N6507
V_DRM, V_RRM
400
V
2N6508
600
2N6509
800
On-state current RMS (180° conduction angles; T_C = 85°C)
I_T(RMS)
25
A
Average on-state current (180° conduction angles; T_C = 85°C)
I_T(AV)
16
A
Peak non-repetitive surge current (1/2 cycle, sine wave 60 Hz, T_J = 100°C
I_TSM
250
A
Forward peak gate power (pulse width ≤ 1.0 µs, T_C = 85°C)
P_GM
20
W
Forward average gate power (t = 8.3ms, T_C = 85°C)
P_G(AV)
`0.5
W
Forward peak gate current (pulse width ≤ 1.0 µs, T_C = 85°C)
I_GM
2.0
A
Operating junction temperature range
T_J
-40 to +125
°C
Storage temperature range
T_stg
-40 to +150
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may
be affected.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not
be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction-to-case
Maximum lead temperature for soldering purposes 1/8” in from case for 10 seconds
Symbol
R_θJC
T_L
Max
1.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Peak repetitive forward or reverse blocking current
(V_AK = rated V_DRM or V_RRM, gate open)
ON CHARACTERISTICS
T_J = 25°C
T_J = 125°C
Forward on-state voltage ⁽²⁾ (I_TM = 50A)
Gate trigger current (continuous dc)
(V_AK = 12Vdc, R_L = 100Ω)
T_C = 25°C
T_C = -40°C
Gate trigger voltage (continuous dc) (V_AK = 12 Vdc, R_L = 100Ω, T_C = -40°C)
Gate non-trigger voltage (V_AK = 12Vdc, R_L = 100Ω, T_J = 125°C)
Holding current
(V_AK = 12Vdc, initiating current = 200mA, gate open)
T_C = 25°C
T_C = -40°C
Turn-on time (I_TM = 25A, I_GT = 50mAdc)
Turn-off time (V_DRM = rated voltage)
(I_TM = 25A, I_R = 25A)
(I_TM = 25A, I_R = 25A, T_J = 125°C)
DYNAMIC CHARACTERISTICS
Critical rate of rise of off state voltage
(Gate open, rated V_DRM, exponential waveform)
2. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
Symbol Min Typ Max Unit
I_DRM,
I_RRM
-
-
10
µA
-
- 2.0
mA
V_TM
-
- 1.8
V
- 9.0 30
I_GT
mA
-
-
75
V_GT
- 1.0 1.5
V
V_GD
0.2 -
-
V
- 18 40
I_H
mA
-
-
80
t_gt
- 1.5 2.0
µs
t_q
-
15
-
µs
-
35
-
dv/dt
-
50
-
V/µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20130116