2N6400 Datasheet, PDF (1/5 Pages) New Jersey Semi-Conductor Products, Inc. – SILICON CONTROLLED RECTIFIERS

DIGITRON SEMICONDUCTORS
2N6400-2N6405
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage ⁽¹⁾
(T_J = -40 to 125°C, sine wave 50 to 60Hz, gate open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
V_DRM
V_RRM
50
100
200
400
600
800
Volts
On-state RMS current
(180° conduction angles), T_C = 100°C)
I_T(RMS)
16
Amps
Average on-state current
(180° conduction angles, T_C = 100°C)
I_T(AV)
Amps
10
Peak non-repetitive surge current
(1/2 cycle, sine wave 60Hz, T_J = 90°C)
Circuit fusing (t = 8.3ms)
I_TSM
Amps
160
I²t
145
A²s
Forward peak gate power
(pulse width ≤ 1.0µs, T_C = 100°C)
P_GM
Watts
20
Forward average gate power
(t = 8.3ms, T_C = 100°C)
P_G(AV)
Watts
0.5
Forward peak gate current
(Pulse width ≤ 1.0µs, T_C = 100°C)
I_GM
Amps
2.0
Operating junction temperature range
T_J
-40 to 125
°C
Storage temperature range
T_stg
-40 to 150
°C
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage, however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Maximum lead temperature for soldering purposes 1/8” from case for 10 seconds
Symbol
R_Ó¨JC
T_L
Max
1.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol Min
OFF CHARACTERISTICS
Peak repetitive forward or reverse blocking current
(V_AK = rated V_DRM or V_RRM, gate open)
T_J = 25°C
I_DRM,
-
T_J = 125°C
I_RRM
-
ON CHARACTERISTICS
Peak forward on-state voltage
(I_TM = 32A peak, pulse width ≤ 1ms, duty cycle ≤ 2%)
V_TM
-
Gate trigger current (continuous dc)
(V_D = 12Vdc, R_L = 100ohms)
Gate trigger voltage (continuous dc)
(V_D = 12Vdc, R_L = 100ohms)
T_C = 25°C
I_GT
-
T_C = -40°C
-
T_C = 25°C
V_GT
-
T_C = -40°C
-
Gate non-trigger voltage
(V_D = 12Vdc, R_L = 100ohms)
144 Market Street
Kenilworth NJ 07033 USA
T_C = 125°C
V_GD
0.2
phone +1.908.245-7200
fax +1.908.245-0555
Typ
Max
-
10
-
2.0
-
1.7
9.0
30
-
60
0.7
1.5
-
2.5
-
-
[e-mail]
www.digitroncorp.com
Unit
µA
mA
Volts
mA
Volts
Volts
Rev. 20120924