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2N6394 Datasheet, PDF (1/5 Pages) Motorola, Inc – SCRs 12 AMPERES RMS 50 thru 800 VOLTS
DIGITRON SEMICONDUCTORS
2N6394-2N6399
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
(TJ = -40 to +125°C, sine wave, 50 to 60 Hz, gate open)
2N6394
2N6395
2N6397
2N6399
VRRM, VDRM
50
100
Volts
400
800
On state RMS current
(180° conduction angles, TC = 90°C)
IT(RMS)
Amps
12
Peak non-repetitive surge current
(1/2 cycle, 60Hz, sine wave, TJ = 90°C)
Circuit fusing considerations (t = 8.3ms)
ITSM
Amps
100
I2t
40
A2s
Forward peak gate power (pulse width ≤ 1.0µs, TC = 90ۜ°C)
PGM
20
Watts
Forward average gate power (t = 8.3ms, TC = 90°C)
PG(AV)
0.5
Watts
Forward peak gate current (pulse width ≤ 1.0µs, TC = 90ۜ°C)
IGM
2
Amps
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of
the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum
Unit
Thermal resistance, junction to case
RÓ¨JC
Maximum lead temperature for soldering purposes 1/8” from
case for 10 seconds
TL
2.0
°C/W
260
°C
ELECTRICAL CHARACTERISTICS (TC 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 100°C
IDRM or IRRM
ON CHARACTERISTICS
Peak forward on-state voltage (2)
(ITM = 24A peak)
VTM
Gate trigger current (continuous dc)
(VD = 12 Vdc, RL = 100 Ω)
IGT
Gate trigger voltage (continuous dc)
(VD = 12 Vdc, RL = 100 Ω)
VGT
Gate non-trigger voltage
(VD = 12 Vdc, RL = 100 Ω, TJ = 125°C)
VGD
Holding current
(VD = 12Vdc, initiating current = 200mA, gate open)
IH
Turn on time
(ITM = 12A, IGT = 40mAdc, VD = rated VDRM)
tgt
Min.
Typ.
Max.
-
-
10
-
-
2.0
-
1.7
2.2
-
5.0
30
-
0.7
1.5
0.2
-
-
-
6.0
50
-
1.0
2.0
Unit
µA
mA
Volts
mA
Volts
Volts
mA
µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130117