2N6157 Datasheet, PDF (1/4 Pages) Motorola, Inc – Silicon Bidirectional Triode Thyristors

DIGITRON SEMICONDUCTORS
2N6157-2N6165
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Peak repetitive off-state voltage
(T_J = -65 to +125°C)
(1/2 sine wave 50 to 60Hz, gate open)
2N6157, 2N6160, 2N6163
2N6158, 2N6161, 2N6164
2N6159, 2N6162, 2N6165
Peak gate voltage
RMS on-state current (full sine wave, 50 to 60Hz)
(T_C = -65 to +85°C)
(T_C = 100°C)
Peak non-repetitive surge current
(1 cycle, sine wave, 60 Hz preceded and followed by a 30A RMS current, T_C = 85°C)
Circuit fusing considerations (t = 8.3ms)
Peak gate power
(T_J = 80°C, pulse width = 2µs)
Average gate power
(T_J = 80°C, t = 8.3ms)
Peak gate current
Operating junction temperature range
Storage temperature range
Stud torque
Symbol
Value
Unit
V_DRM
V_GM
I_T(RMS)
I_TSM
I²t
P_GM
P_G(AV)
I_GM
T_J
T_stg
Volts
200
400
600
10
Volts
30
Amps
20
Amps
250
260
A²s
20
Watts
0.5
2.0
-65 to +125
-65 to +150
30
Watts
Amps
°C
°C
In. lb.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
R_Ó¨JC
Maximum
1
Unit
°C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Peak forward or reverse blocking current
(Rated V_DRM or V_RRM @ T_J = 25°C)
(Rated V_DRM or V_RRM @ T_J = 125°C)
Peak on-state voltage (either direction)
(I_TM = 42A peak, pulse width = 1 to 2 ms, duty cycle ≤ 2%)
Gate trigger current (continuous dc)⁽¹⁾
(Main terminal voltage = 12V, R_L = 50Ω)
MT2(+),G(+)
MT2(+),G(-)
MT2(-),G(-)
MT2(-),G(+)
MT2(+),G(+); MT2(-), G(-) T_C = -65°C
MT2(+),G(-); MT2(-), G(+) T_C = -65°C
Symbol Min Typ. Max
I_DRM,
I_RRM
-
-
10
-
-
2
V_TM
-
1.5 2.0
-
15 60
-
20 70
I_GT
-
20 70
-
30 100
-
- 200
-
- 250
Unit
µA
mA
Volts
mA
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Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20130131