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2N3980 Datasheet, PDF (1/3 Pages) Motorola, Inc – Silicon Annular PN Unijunction Transister
DIGITRON SEMICONDUCTORS
2N3980
PN UNIJUNCTION TRANSISTOR
MAXIMUM RATINGS
Rating
Symbol
Value
RMS power dissipation (1)
PD
360
RMS emitter current
Ie
60
Peak pulse emitter current (2)
ie
1
Emitter reverse voltage
VB2E
30
Interbase voltage
VB2B1
35
Storage temperature range
Tstg
-65 to 200
Note 1: Derate 2.4mW/°C increase in ambient temperature. Total power dissipation must be limited by external circuitry.
Note 2: Capacitance discharge current must fall to 0.37 Amp within 3ms and PRR ≤ 10PPS.
Unit
mW
mA
Amp
Volts
Volts
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Intrinsic standoff ratio
VB2B1 = 10V (1)
ŋ
-
0.68
-
0.82
Interbase resistance
VB2B1 = 3V, IE = 0
RBB
4
6
kΩ
8
Interbase resistance temperature coefficient
VB2B1 = 3V, IE = 0, TA = -65 to +100°C
αRBB
0.4
-
%/°C
0.9
Emitter saturation voltage
VB2B1 = 10V, IE = 50mA (2)
VEB1(sat)
-
2.5
Volts
3
Modulated interbase current
VB2B1 = 10V, IE = 50mA
IB2(mod)
12
15
mA
-
Emitter reverse current
VB2E = 30V, IB1 = 0
VB2E = 30V, IB1 = 0, TA = 125°C
IEB20
-
-
5
10
nA
-
1
µA
Peak point emitter current
VB2B1 = 25V
IP
µA
-
0.6
2
Valley point current
VB2B1 = 20V, RB2 = 100Ω (2)
IV
1
mA
4
10
Base one peak pulse voltage(3)
Figure 3
VOB1
6
8
Volts
-
Maximum oscillation frequency
Figure 4
f(max)
-
400
-
kHz
Note 1: Intrinsic standoff ratio,
ŋ is defined by equation:
ŋ = VP – (VEB1)
VB2B1
Where: VP = Peak point emitter voltage
VB2B1 = Interbase voltage
VF = emitter to base-one junction diode drop (0.45V @ 10µA)
Note 2: Use pulse techniques: PW ≈ 300µs duty cycle ≤ 2% to avoid internal heating due to interbase modulation which may result in erroneous readings.
Note 3: Base-one peak pulse voltage is measured in circuit of Figure 3. This specification is used to ensure minimum pulse amplitude for applications in ACR firing circuits and
other types of pulse circuits.
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