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2N3668 Datasheet, PDF (1/3 Pages) General Semiconductor – 12.5A SILICON CONTROLLED RECTIFIERS
DIGITRON SEMICONDUCTORS
2N3668-2N3670, 2N4103
12.5A SILICON CONTROLLED RECTIFIER
MAXIMUM RATINGS
Rating
Symbol 2N3668
Non-repetitive peak reverse voltage
VRM
Peak repetitive reverse voltage
VRRM
Peak forward blocking voltage
VFBOM
Forward current for case temperature TC = +80°C
@ average DC value at a conduction angle of 180°
RMS value
IFAV
IFRMS
Peak surge current for one cycle of applied voltage
60 Hz (sinusoidal), TC = 80°C
IFM
50 Hz (sinusoidal), TC = 80°C
Fusing current
I2t
(TJ = -40 to +100°C, t = 1 to 8.3ms)
Rate of change of forward current
VFB = VBOO, IGT = 200mA, 0.5ns rise time
di/dt
Peak gate power for 10ns duration
PGM
Average gate power
PGAV
Storage temperature
Tstg
Operating case temperature
TC
*Any values of peak gate current or peak gate voltage to give the maximum gate power is permissible.
* Temperature reference point is within 1/8” of the center of the underside of unit.
150
100
100
2N3669
330
200
200
2N3670
660
400
400
8
12.5
200
200
170
170
200
40
0.5
-40 to +125
-40 to +100
2N4103
700
600
600
Units
V
V
V
A
A
A2s
A/µs
W
W
°C
°C
ELECTRICAL CHARACTERISTICS @ maximum ratings and indicated case temperature (TC)
Characteristic
Symbol
2N3668
Min Typ Max
2N3669
Min Typ Max
2N3670
Min Typ Max
2N4103
Min Typ Max
Peak repetitive blocking voltage
@ TC = 100°C
Forward peak blocking current
@TC = 100°C, VD = VDROM
VDROM
100
-
-
200
-
-
400
-
-
600
-
-
IDOM
-
0.2
2
-
0.25 2.5
-
0.3
3
-
0.35
4
Reverse peak blocking current
@ TC = 100°C, VR = VRROM
Forward voltage drop @ 25A
TC = 25°C
IROM
-
0.05
1
-
0.1 1.25
-
0.2 1.5
-
0.3
3
VF
-
1.5 1.8
-
1.5 1.8
-
1.5 1.8
-
1.5 1.8
DC gate-trigger current
@ TC = 25°C
DC gate-trigger voltage
@ TC = 25°C
IGT
1
20
40
1
20
40
1
20
40
1
20
40
VGT
-
1.5
2
-
1.5
2
-
1.5
2
-
1.5
2
Holding current @ TC = 25°C
IH
0.5 25
50 0.5 25
50 0.5 25
50
0.5 25
50
Critical rate of forward voltage
VF = VBOO, exponential rise
TC = 100°C
dv/dt
10 100
-
10 100
-
10 100
-
10 100
-
Turn-on time
(delay time + rise time)
ton
VD = VDROM, IT = 8A, IG = 200mA,
0.1µs rise time, TC = 25°C
-
1.25
-
-
1.25
-
-
1.25
-
-
1.25
-
Turn-off time
(reverse recovery time + gate
recovery time)
IF = 8A, 50ns pulse width,
dvFS/dt = 20V/µs,
dir/dt = 30A/µs, IGT = 200mA,
TC = 80°C
Thermal resistance
Junction to case
toff
-
20
50
-
20
50
-
20
50
-
20
50
RÓ¨JC
-
-
1.7
-
-
1.7
-
-
1.7
-
-
1.7
Units
V
mA
mA
V
mA
V
mA
V/µs
µs
µs
°C/W
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fax +1.908.245-0555
sales@digitroncorp.com
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Rev. 20130108
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