2N3027 Datasheet, PDF (1/7 Pages) Microsemi Corporation – SCRs 0.5 Amp, Planear

DIGITRON SEMICONDUCTORS
2N3027-2N3032
0.5 AMP SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Characteristic
Symbol
2N3027
2N3030
2N3028
2N3031
2N3029
2N3032
Repetitive peak off-state voltage
V_DRM
30V
60V
100V
Repetitive peak reverse voltage
V_RRM
30V
60V
100V
DC on-state current
100°C case
I_T
75°C ambient
500mA
250mA
Repetitive peak on-state current
I_TRM
30A
Surge (non-repetitive) on-state current
50ms
I_TSM
5A
8ms
8A
Peak gate current
I_GM
250mA
Average gate current
Reverse gate voltage
I_G(AV)
V_GR
25mA
5V
Reverse gate current
I_GR
3mA
Storage temperature range
T_stg
-65°C to +200°C
Operating temperature range
T_J
-65°C to +150°C
Blocking voltage ratings apply over the operating temperature range, provided the gate is connected to the cathode through an appropriate resistor, or adequate gate bias is used.
ELECTRICAL CHARACTERISTIC (@ 25°C unless otherwise noted) (2N3027-2N3029)
Parameter
Symbol Min.
Typ.
Max. Unit
Test Condition
25°C tests
Off state current
I_DRM
-
0.002
0.100
µA R_GK = 1KΩ, V_DRM = rating
Reverse current
I_RRM
-
0.002
0.100
µA R_GK = 1KΩ, V_RRM = rating
Reverse gate voltage
V_GR
5
8
-
V I_GR = 0.1mA
Gate trigger current
I_GT
-5
8
200
µA R_GS = 10KΩ, V_D = 5V
Gate trigger voltage
V_GT
0.400
0.550
0.800
V R_GS = 100Ω, V_D = 5V
On-state voltage
Holding current
V_T
0.800
1.200
1.500
V I_T = 1A (pulse test)
I_H
0.300
0.700
5.000
mA R_GK = 1KΩ, V_D = 5V
Off-state voltage – critical rate of rise
30
60
dv/dt
15
30
10
25
-
R_GK = 1KΩ, V_D = 30V (2N3027)
-
V/µs R_GK = 1KΩ, V_D = 60V (2N3028)
-
R_GK = 1KΩ, V_D = 100V (2N3029)
Gate trigger-on pulse width
t_pg(on)
-
0.070
0.200
µs I_G = 10mA, I_T = 1A, V_D = 30V
Delay time
t_d
-
0.080
-
µs I_G = 10mA, I_T = 1A, V_D = 30V
Rise time
t_r
-
0.040
-
µs I_G = 10mA, I_T = 1A, V_D = 30V
Circuit commutated turn-off time
t_g
-
0.700
2.000
µs I_T = 1A, I_R = 1A, R_GK = 1KΩ
150°C Tests
High temperature off-state current
I_DRM
-
2
20
µA R_GK = 1KΩ, V_DRM = rating
High temperature reverse current
I_RRM
-
20
50
µA R_GK = 1KΩ, V_RRM = rating
High temperature gate trigger voltage
V_GT
0.100
0.150
0.600
V R_GS = 100Ω, V_D = 5V
High temperature holding current
I_H
0.050
0.200
1.000
mA R_GK = 1KΩ, V_D = 5V
-65°C Tests
Low temperature gate trigger voltage
V_GT
0.600
0.750
1.100
V R_GS = 100Ω, V_D = 5V
Low temperature gate trigger current
I_GT
0
150
1.200 mA R_GS = 10KΩ, V_D = 5V
Low temperature holding current
I_H
0.500 3.500
10
mA R_GK = 1KΩ, V_D = 5V
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Rev. 20130116