2N2322 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS

DIGITRON SEMICONDUCTORS
2N2322(A)-2N2328(A), 2N2329
SILICON CONTROLLED RECTIFIERS
1.6 AMP, PLANAR
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Ratings
Peak repetitive forward voltage
Peak repetitive reverse voltage
Non-repetitive peak reverse voltage
DC on-state current
80°C ambient
85°C case
One cycle surge on-state current
Repetitive peak on-state current
Gate power dissipation
Gate power dissipation
Peak gate current
Reverse gate voltage
Reverse gate current
Operating temperature
Storage junction temperature
Symbol
V_DRM
V_RRM
V_RSM
2N2322
2N2322A
25
25
40
2N2323
2N2323A
50
50
75
2N2324
2N2324A
100
100
150
2N2325
2N2325A
150
150
225
2N2326
2N2326A
200
200
300
2N2327
2N2327A
250
250
350
2N2328
2N2328A
300
300
400
2N2329
400
400
500
Units
V
V
V
I_T(AV)
300
mA
1.6
A
I_TSM
15
A
I_TM
30
A
P_GM
0.1
W
P_GM(AV)
0.01
W
I_GM
100
mA
V_GR
6
V
I_GR
3
mA
T_op
-65 to +125
°C
T_stg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS @ 25°C
Characteristics
Symbol
Off-state current
I_DRM
Reverse current
I_RRM
Gate trigger current
“A” types
I_GT
Non “A” types
Gate trigger voltage
“A” types
V_GT
Non “A” types
On-state voltage
V_TM
Holding current
I_H
Reverse gate current
I_GR
Delay time
t_d
Rise time
t_r
Circuit commutated turn off time
t_q
Min
-
-
-
-
0.35
0.35
-
-
-
-
-
-
Typ
0.1
0.1
2
50
0.52
0.55
2.0
0.3
1
0.6
0.4
20
Max
10
10
20
200
0.60
0.80
2.2
2.0
200
-
-
-
Unit
µA
µA
µA
V
V
mA
µA
µs
µs
µs
Test Condition
V_DRM = rating, R_GK = 1K (2K for “A” types)
V_RRM = rating, R_GK = 1K (2K for “A” types)
V_D = 6V, R_L = 100Ω
V_D = 6V, R_GK = 2K, R_L = 100Ω
V_D = 6V, R_GK = 1K, R_L = 100Ω
I_TM = 4A (pulse test)
V_D = 6V, R_GK = 1K (2K for “A” types)
V_GR = 6V
I_G = 10mA, I_T = 1A, V_D = 30V
I_G = 10mA, I_T = 1A, V_D = 30V
I_T = 1A, I_R = 1A, R_GK = 1K
ELECTRICAL CHARACTERISTICS @ 125°C
Characteristics
Symbol Min
Off-state current
I_DRM
-
Reverse current
I_RRM
-
Gate trigger voltage
V_GT
0.1
Holding current
“A” types
Non “A” types
I_H
0.1
0.15
Off-state voltage – critical rate of rise
“A” types
Non “A” types
dv/dt
0.7
1.8
Typ
1
1
0.3
-
-
-
-
Max
100
100
-
-
-
-
-
Unit
µA
µA
V
mA
V/µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Test Condition
V_DRM = rating, R_GK = 1K (2K for “A” types)
V_RRM = rating, R_GK = 1K (2K for “A” types)
V_D = rated V_D, R_GK = 1K (2K for “A” types)
V_D = 6V, R_GK = 2K
V_D = 6V, R_GK = 1K
V_DRM = rating, R_GK = 2K
V_DRM = rating, R_GK = 1K
[e-mail]
www.digitroncorp.com
Rev. 20130116