2N1671 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – UNIJUNCTION TRANSISTOR

DIGITRON SEMICONDUCTORS
2N1671A - C
UNIJUNCTION TRANSISTOR
MAXIMUM RATINGS
Rating
Base 1 – emitter reverse voltage
Base 2 – emitter reverse voltage
Interbase voltage
RMS emitter current
Emitter peak current
Total power dissipation
Maximum junction temperature
Storage temperature range
Symbol
V_B1E
V_B2E
V_B1B2
I_FRMS
I_EM
P_tot
T_J
T_stg
Value
30
30
35
50
2
450
150
-55 to 150
Unit
V
V
V
mA
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
2N1671
Emitter reverse current
I_EB2O
V_B2E = 30V, I_B1 = 0
2N1671A
2N1671B
2N1671
Emitter saturation voltage
V_EB1(sat)
V_B2B1 = 10V, I_E = 50mA
2N1671A
2N1671B
2N1671
Interbase resistance
R_BBO
V_B2B1 = 3V, I_E = 0
2N1671A
2N1671B
2N1671
Intrinsic standoff ratio
η
V_B2B1 = 10V
2N1671A
2N1671B
2N1671
Valley current
I_V
V_B2B1 = 10V, R_B2 = 100□ 2N1671A
2N1671B
2N1671
Peak current
I_P
V_B2B1 = 25V
2N1671A
2N1671B
Min
-
-
-
-
-
-
4.7
4.7
4.7
0.47
0.47
0.47
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-12
-12
-0.2
5
5
5
9.1
9.1
9.1
0.62
0.62
0.62
8
8
8
25
25
6
Unit
µA
V
K□
-
mA
µA
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20121023