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2N1595 Datasheet, PDF (1/2 Pages) Comset Semiconductor – SILICON THYRISTOR
DIGITRON SEMICONDUCTORS
2N1595-2N1599
SILICON THYRISTOR
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Symbol
Ratings
2N1595 2N1596
VRSM(REP)
Peak reverse blocking voltage*
50
100
IT(RMS)
Forward current RMS (all conduction angles)
Peak surge current (one-cycle, 60Hz,
ITSM
TJ = -65 to +125°C)
PGM
Peak gate power – forward
PG(AV)
Average gate power – forward
IGM
Peak gate current – forward
VGFM
Peak gate voltage – forward
VGRM
Peak gate voltage – reverse
TJ
Operating junction temperature range
TSTG
Storage temperature range
*VDRM or VRSM can be applied for all types on a continuous dc basis without incurring damage.
2N1597
200
1.6
15
0.1
0.01
0.1
10
10
-65 to +125
-65 to +150
2N1598
300
2N1599
400
Unit
V
Amp
Amp
W
W
Amp
V
V
°C
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted, RGK = 1000Ω)
Symbol
Ratings
2N1595 2N1596 2N1597 2N1598
VDRM
Peak forward blocking voltage*
Min.
50
Peak reverse blocking current
IRRM
(Rated VDRM, TJ = 125°C)
Max.
Peak forward blocking current
IDRM
Max.
(Rated VDRM with gate open, TJ = 125°C)
100
200
300
1.0
1.0
Gate trigger current
Typ.
2.0
IGT
Anode voltage = 7.0 Vdc, RL = 12Ω
Max.
10
Gate trigger voltage
Typ.
0.7
VGT
Anode voltage = 7.0Vdc, RL = 12Ω
Max.
3.0
VDRM = rated, RL = 100Ω, TJ = 125°C
Min.
0.2
Holding current
IH
Anode voltage = 7.0 Vdc, gate open
Typ.
5.0
Forward on-voltage
Typ.
1.1
VTM
IT = 1Adc
Max.
2.0
tgt
Turn-on time (td+tr)
IGT = 10mA, IT = 1A
Typ.
0.8
Turn-off time
tq
IT = 1A, IR = 1A, dv/dt = 20 V/µs,
TJ = 125°C
Typ.
10
VDRM = rated voltage
*VDRM or VRSM can be applied for all types on a continuous dc basis without incurring damage.
2N1599
400
Unit
V
mA
mA
mA
V
mA
V
µs
µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130116
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