1N914 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diode

DIGITRON SEMICONDUCTORS
1N914,A,B-1N916,A,B
SWITCHING RECTIFIERS
MAXIMUM RATINGS
Parameter
Maximum repetitive reverse voltage
Average rectified forward current
Non-repetitive peak forward surge current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage temperature range
Operating junction temperature
Power dissipation
Thermal resistance, junction to ambient
Symbol
V_RRM
I_F(AV)
I_FSM
T_stg
T_J
P_D
R_Ó¨JA
Value
100
200
1.0
4.0
-65 to +200
-65 to +175
500
300
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Breakdown voltage
V_R
I_R = 100µA
I_R = 5.0µA
Forward voltage
Reverse current
1N914
I_F = 5.0mA
1N916B
I_F = 5.0mA
1N914, 1N916
1N914A, 1N916A
V_F
I_F = 10mA
I_F = 20mA
1N916B
I_F = 20mA
1N914B
I_F = 100mA
V_R = 20V
I_R
V_R = 20V, T_A = 150°C
V_R = 75V
Total capacitance
1N916A,B
1N914A, B
C_T
V_R = 0, f = 1.0 MHz
V_R = 0, f = 1.0 MHz
Reverse recovery time
t_rr
I_F = 10mA, V_R = 6.0V(60mA)
I_rr = 1.0mA, R_L = 100Ω
MECHANICAL CHARACTERISTICS
Case
DO-35
Marking
Body painted, alpha-numeric
Polarity
Cathode band
Units
V
mA
A
°C
°C
mW
°C/W
Min
100
75
620
630
Max
720
730
1.0
1.0
1.0
1.0
25
50
5.0
2.0
4.0
4.0
Unit
V
mV
mV
V
V
V
V
nA
µA
µA
pF
ns
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20121210