1N6626 Datasheet, PDF (1/3 Pages) Microsemi Corporation – ULTRA FAST RECTIFIERS

DIGITRON SEMICONDUCTORS
1N6626 – 1N6631
ULTRA FAST RECTIFIERS
MAXIMUM RATINGS @ 25°C
Rating
Value
Junction temperature
-65° to 150°C
Storage temperature
-65° to 175°C
Peak forward surge current @ 25°C ⁽¹⁾
1N6626-1N6630
1N6631
75A
60A
Average rectified forward current @ T_L = 75°C⁽²⁾
1N6626-1N6628
1N6629-1N6631
Average rectified forward current at T_A = 25°C⁽³⁾
1N6626-1N6628
1N6629-1N6631
2.3A
1.8A
1.75A
1.40A
Thermal resistance L = 0.375”
22°C/W
Capacitance at V_R = 10V
40pF
Solder temperature
260°C for 10 s maximum
Note 1: Test pulse = 8.3 ms, half-sine wave.
Note 2: Derate linearly at 1.0%/°C for T_L > 75°.
Note 3: Derate linearly at 0.80%/°C for T_A > 25°C. This is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where T_J(max) is not
exceeded.
ELECTRICAL CHARACTERISTICS
Working
peak
reverse
voltage
Minimum
breakdown
voltage
Max forward voltage
Maximum reverse
current
Maximum
reverse
recovery
time (low
current)
Maximum
reverse
recovery
time (high
current)
Type
V_RWM
V_R
I_R = 50μA
V_F @ I_F
I_{R @} V_RWM
T_A=25°C
T_A=150°C
t_rr
Note 1
t_rr
Note 2
V
V
V@A
V@A
μA
μA
ns
ns
1N6626
200
220
1.35V@2.0A 1.50V@4.0A
2.0
500
30
45
1N6627
400
440
1.35V@2.0A 1.50V@4.0A
2.0
500
30
45
1N6628
600
660
1.35V@2.0A 1.50V@4.0A
2.0
500
30
45
1N6629
800
880
1.40V@1.4A 1.70V@3.0A
2.0
500
50
60
1N6630
900
990
1.40V@1.4A 1.70V@3.0A
2.0
500
50
60
1N6631
1000
1100
1.60V@1.4A 1.95V@2.0A
4.0
600
60
80
Note 1: Low Current Reverse Recovery Time Test Conditions I_F = 0.5A, I_RM = 1.0A, I_R(REC) = 0.25A.
Note 2: High Current Reverse Recovery Time Test Conditions I_F = 2.0A, 100A/µs, MIL-STD-750, METHOD 4031, CONDITION D.
Peak
Recovery
Current
Forward
Recovery
Voltage
I_{RM (rec)}
I_F = 2A
100A/μS
Note 2
A
3.5
3.5
3.5
4.2
4.2
5.0
V_FRM Max.
I_F = 0.5A
t_r = 12ns
V
8
8
8
12
12
20
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20121120