1N645 Datasheet, PDF (1/1 Pages) Microsemi Corporation – Silicon Switching Diode DO-35 Glass Package

DIGITRON SEMICONDUCTORS
1N645-1N649
SILICON RECTFIER DIODES
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix)
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number
MAXIMUM RATINGS
Rating
Power dissipation at 3/8” from body, T_L = 75°C
Average forward current at T_L = 75°C
Operating and storage temperature range
Thermal impedance
Thermal resistance
Symbol
P_tot
I_AV
T_J, T_stg
Z_Ó¨JX
R_Ó¨JL
Value
600
400
-65 to 175
35
250
Unit
mW
mA
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (@ 25°C unless otherwise stated)
Part
number
Reverse
voltage
V_R
Minimum
breakdown
voltage@
100µA
B_V
Maximum
average
rectified
current
I_O
I_O
25°C 150°C
Forward voltage
drop
V_F @ I_F = 400mA
Min
Max
Volts
Volts
Amps Amps
Volts
Volts
1N645
225
275
0.4
0.15
0.8
1.0
1N646
300
360
0.4
0.15
0.8
1.0
1N647
400
480
0.4
0.15
0.8
1.0
1N648
500
600
0.4
0.15
0.8
1.0
1N649
600
720
0.4
0.15
0.8
1.0
Note 1: Surge current @ T_A = 25° to 150°C, t_p = 120 sec.
MECHANICAL CHARACTERISTICS
Case
DO-35A
Marking
Polarity
Body painted, alpha-numeric
Cathode end
Maximum
reverse
leakage
current
I_R @ V_R
25°C 150°C
µA
µA
0.05
50
0.05
50
0.05
50
0.05
50
0.05
50
Maximum
surge
current⁽¹⁾
I_FSM
Amps
5
5
5
5
5
Typical
junction
capacitance
@-12V
C_O
pF
20
20
20
20
20
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20120705