1N5829 Datasheet, PDF (1/2 Pages) Micro Commercial Components – 25 Amp Schottky Barrier Rectifier 20 to 35 Volts

DIGITRON SEMICONDUCTORS
1N5829-1N5831
25 AMP SCHOTTKY RECTIFIERS
MAXIMUM RATINGS
Symbol
Parameter
T_STG
Storage temperature range
T_J
Operating junction temperature range
R_θJC
Maximum thermal resistance
R_θJS
Typical thermal resistance
Mounting torque
Weight
Value
-65° to +125°C
-65° to +125°C
1.75°C/W junction to case
0.5°C/W junction to sink
15 inch pounds maximum
6 grams (.02 ounces) typical
ELECTRICAL CHARACTERISTICS
Symbol
Characteristic
V_RWM
Working peak reverse voltage
V_RRM
Repetitive peak reverse voltage
I_F(AV)
Average forward current
I_FSM
Maximum surge current
V_FM
Maximum peak forward voltage
V_FM
Maximum peak forward voltage
V_FM
Maximum peak forward voltage
I_RM
Maximum peak reverse current
I_RM
Maximum peak reverse current
C_J
Typical junction capacitance
* Pulse test: Pulse width 300µsec, duty cycle 2%.
1N5829
20V
20V
25A
800A
.360V
.440V
.720V
150mA
3.0mA
1650pF
1N5830
30V
30V
25A
800A
.370V
.460V
.770V
150mA
3.0mA
1650pF
MECHANICAL CHARACTERISTICS
Case
DO-4(R)
Marking
Alpha-numeric
Normal polarity
Cathode is stud
Reverse polarity
Anode is stud (add “R” suffix)
1N5831
40V
40V
25A
800A
.380V
.480V
.820V
150mA
3.0mA
1650pF
Test Condition
T_C = 97°C, square wave, R_θJC = 1.75°C/W
8.3ms, half sine, T_J = 125°C
I_FM = 10A: T_J = 25°C*
I_FM = 25A: T_J = 25°C*
I_FM = 78.5A: T_J = 25°C*
V_RRM, T_J = 100°C
V_RRM, T_J = 25°C
T_J = 25°C, V_R = 5V, f = 1MHz
DO-4(R)
Inches
Millimeters
Min Max Min Max
A - 0.078 - 1.981
B 0.422 0.453 10.719 11.506
C - 0.405 - 10.287
D - 0.800 - 20.320
E 0.420 0.440 10.668 11.176
F - 0.250 - 6.350
G - 0.424 - 10.770
H 0.066 - 1.676 -
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20121127