1N5711 Datasheet, PDF (1/3 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

DIGITRON SEMICONDUCTORS
1N5711, 1N5712 & 1N6263
SCHOTTKY DIODES
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.
The low forward voltage drop and fast switching make it ideal for protection of MOS devices.
MAXIMUM RATINGS @ 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Peak Inverse Voltage
1N5711
70
1N6263
V_RRM
60
Power Dissipation (Infinite Heatsink)
P_tot
400⁽¹⁾
Maximum Single Cycle Surge 10 μs Square Wave
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Note 1: Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
l_FSM
R_θJA
T_j
T_S
2.0
0.3⁽¹⁾
125⁽¹⁾
-55 to +150⁽¹⁾
Unit
V
mW
A
°C/mW
°C
°C
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Breakdown Voltage
1N5711
1N5712
1N6263
V_(BR)R
l_R=10μA
Leakage Current
1N5711, 1N6263
l_R
1N5712
V_R=50V
V_R = 16V
Forward Voltage Drop
1N5711, 1N6263
V_F
1N5712
l_F=1mA
l_F=15mA
I_F = 35mA
Junction Capacitance
1N5711
1N5712
C_tot
1N6263
V_R=0V, f=1MHz
Min
70
20
60
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
Max Unit
-
-
V
-
200
nA
150
0.41
1.0
V
1.0
2.0
2.0
pF
2.2
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20121128