1N5059 Datasheet, PDF (1/2 Pages) Powerex Power Semiconductors – Passivated Rectifier

DIGITRON SEMICONDUCTORS
1N5059-1N5062
STANDARD AVALANCHE SINTERGLASS DIODE
MAXIMUM RATINGS
Parameter
Test condition
Reverse voltage = repetitive peak
reverse voltage
Peak forward surge current
Average forward current
Junction and storage temperature range
Maximum pulse energy in avalanche
mode, non repetitive
(inductive load switch off)
Junction ambient
t_p = 10ms, half sinewave
R_thJA = 45 K/W, T_amb = 50°C
R_thJA = 100 K/W, T_amb = 75°C
I_(BR)R = 1 A, inductive load
Lead length l = 10mm,
T_L = constant
On PC board with spacing 25
mm
Sub type
1N5059
1N5060
1N5061
1N5062
Symbol
V_R = V_RRM
I_FSM
I_FAV
T_J, T_stg
E_R
R_thJA
Value
200
400
600
800
50
2
0.8
-55 to +175
Unit
V
A
A
°C
20
mJ
45
K/W
100
ELECTRICAL CHARACTERISTICS
Parameter
Forward voltage
Reverse current
Reverse breakdown voltage
Reverse recovery time
Diode capacitance
Test condition
I_F = 1A
I_F = 2.5A
V_R = V_RRM
V_R = V_RRM, T_J = 100°C
V_R = V_RRM, T_J = 150°C
I_R = 100µA
I_F = 0.5A, I_R = 1A, I_R = 0.25A
V_R = 0 V, f = 1 MHz
Sub type Symbol Min
V_F
1N5059
1N5060
1N5061
1N5062
I_R
V_(BR)R
t_rr
C_D
225
450
650
900
Typ
40
Max
1
1.15
1
10
100
Unit
V
µA
1600 V
4
µs
pF
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20100122