1N3670A Datasheet, PDF (1/3 Pages) Digitron Semiconductors – STANDARD RECOVERY RECTIFIERS

DIGITRON SEMICONDUCTORS
1N3670A-1N3673A
STANDARD RECOVERY RECTIFIERS
ELECTRICAL CHARACTERISTICS
Characteristics
Repetitive peak reverse voltage
Maximum RMS reverse voltage
Non-repetitive peak reverse voltage
Average forward current
Maximum surge current
Maximum I²t for fusing
Maximum I²âˆšt for individual device fusing
Maximum peak forward voltage
Maximum average reverse current
V_RRM = 700V
V_RRM = 800V
V_RRM = 900V
V_RRM = 1000V
*Pulse test: pulse width 300µsec, duty cycle 2%
THERMAL CHARACTERISTICS
Characteristics
Storage temperature range
Operating junction temperature range
Maximum thermal resistance
Symbol
V_RRM
V_RMS
V_RSM
I_F(AV)
I_FSM
I²t
I²âˆšt
V_FM
1N3670
700V
490V
900V
1N3671 1N3672
800V
900V
560V
630V
1000V 1100V
12A
230A
240A
275A
285A
260A²s
240A²s
370A²s
340A²s
3715 A²âˆšs
1.35V
1N3673
1000V
700V
1200V
Test Conditions
180° sinusoidal conduction
@50Hz
@60Hz
@50Hz
@60Hz
Following
any rated
load
condition
and rated
V_RRM applied
Following
any rated
load
condition
and V_RRM
applied
following
surge = 0
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
With rated
V_RRM applied
following
surge,
initial
T_J = 200°C
With V_RRM =
0 following
surge,
initial
T_J = 200°C
t = 0.1 to 10ms, V_RRM = 0
following surge
I_F(AV) = 12A, T_C = 25°C
I_R(AV)
0.9mA
0.8mA
0.7mA
0.6mA
Max. rated I_F(AV) and T_C
Symbol
T_stg
T_J
R_Ó¨JC
Test Conditions
-65° to 200°C
-65° to 200°C
2.0C/W junction to case
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20121210