1N3208 Datasheet, PDF (1/2 Pages) International Rectifier – 15 Amp Stud-mounted Silicon Rectifier Diodes

DIGITRON SEMICONDUCTORS
1N3208-1N3214, 1N5332
STANDARD RECOVERY RECTIFIERS
MAXIMUM RATINGS
Symbol
Parameter
T_STG
Storage temperature range
T_J
Operating junction temperature range
R_θJC
Maximum thermal resistance
R_θJC
Typical thermal resistance
Maximum mounting torque
Weight
Value
-65 to +200°C
-65 to +200°C
1.25°C/W junction to case
1.1°C/W junction to case
25-30 inch pounds maximum
0.5 ounces (14 grams) typical
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
1N3208
V_R
Peak reverse voltage
50V
I_F(AV)
Average forward current
I_FSM
Maximum surge current
I²t
Maximum I²t for fusing
V_FM
Maximum peak forward voltage
I_RM
Maximum peak reverse current
I_RM
Maximum peak reverse current
Maximum recommended
operating frequency
*Pulse test: Pulse width 300 µsec, duty cycle 2%
1N3209
100V
1N3210
200V
1N3211
300V
1N3212
400V
40 A
800 A
2600 A²s
1.19 V
10 µA
2 mA
10kHz
1N3213
500V
1N3214
600V
1N5332
1200V
Test Conditions
T_C = 146°C, halfsine
wave,
R_θJC = 1.25°C/W
8.3ms, half sine
T_J = 200°C
I_FM = 90A: T_J = 25°C*
V_RRM, T_J = 25°C
V_RRM, T_J = 150°C
MECHANICAL CHARACTERISTICS
Case
DO-5(R)
Marking
Alpha numeric
Normal polarity Cathode is stud
Reverse polarity Anode is stud (add “R” suffix)
144 Market Street
Kenilworth NJ 07033 USA
DO-5(R)
Inches
Millimeters
Min Max Min Max
A
¼-28 UNF2A threads
B 0.669 0.688 16.990 17.480
C - 0.794 - 20.160
D - 1.000 - 25.400
E 0.422 0.453 10.720 11.510
F 0115 0.200 2.920 5.080
G - 0.450 - 11.430
H 0.220 0.249 5.580 6.320
J 0.250 0.375 6.350 9.530
K 0.156 - 3.960 -
M - 0.667 - 16.940
N 0.030 0.080 0.760 2.030
P 0.140 0.175 3.560 4.450
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20121206