1N3085 Datasheet, PDF (1/3 Pages) International Rectifier – 150AMP AVG SILICON RECTIFIER DIODES

DIGITRON SEMICONDUCTORS
1N3085-1N3092, 1N3111, 1N5162
HIGH POWER RECTIFIERS
MAXIMUM RATINGS
Part
number
Maximum repetitive peak reverse
voltage
T_C = -65° to +200°C
V
1N3111
50
1N3085
100
1N3086
200
1N3087
300
1N3088
400
1N3089
500
1N3090
600
1N3091
800
1N3092
1000
1N5162
1200
Maximum direct reverse voltage
T_C = -65° to +200°C
V
40
80
160
240
320
400
480
640
800
960
Maximum average reverse current
at maximum rated I_F(AV) and V_RRM
T_C = 150°C
mA
25
25
17
17
17
17
17
16
12
10
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Maximum average forward current
Maximum peak one-cycle non-
repetitive surge current
I_F(AV)
1N3111, 1N3085,
1N5162 SERIES
150
2850
3000
I_FSM
3400
Maximum I²t for fusing
I²t
Maximum I²âˆšt for individual fusing
Maximum peak forward voltage
Maximum operating case
temperature range
Maximum storage temperature
range
Maximum internal thermal
resistance, junction to case
Thermal resistance, case to sink
I²âˆšt
V_FM
T_C
T_stg
R_thjc
R_thcs
3550
41000
37500
58000
53000
580000
1.2
-65 to +200
-65 to +200
0.25
0.10
Unit
A
A
A²s
A²âˆšs
V
°C
°C
°C/W
°C/W
Test Condition
180° sinusoidal conduction max. T_C = 150°C
Half cycle 50Hz sine
wave or 6ms
rectangular pulse
Half cycle 60Hz sine
wave or 5ms
rectangular pulse
Following any rated
load condition and
with rated V_RRM applied
Half cycle 50Hz sine
wave or 6ms
rectangular pulse
Half cycle 60Hz sine
wave or 5ms
rectangular pulse
Following any rated
load condition and
with V_RRM applied
following surge = 0
t = 10ms
t = 8.3ms
With rated V_RRM
applied following
surge, initial T =
200°C
t = 10ms
t = 8.3ms
With V_RRM = 0
following surge, initial
T = 200°C
t = 0.1 to 10ms, V_RRM = 0 following surge
I_F(AV) = 150A, T_C = 150°C
DC operation
Mounting surface flat, smooth, greased
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20121214