1N1199 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Si Rectifier

DIGITRON SEMICONDUCTORS
1N1199(A,B)-1N1206(A,B)
SILICON POWER RECTIFIER
MAXIMUM RATINGS
Parameter
Symbol
Peak reverse voltage
V_R
Operating & storage
temperature range
T_J, T_stg
Maximum thermal
resistance
R_θJC
Mounting torque
Weight
Add “R” to part numbers for reverse polarity.
1N1199
50V
1N1200
100V
1N1201
150V
1N1202 1N1203
200V
300V
-65 to +200°C
1N1204
400V
1N1205
500V
2.5°C/W junction to case
25-30 inch pounds
.16 ounces (5.0 grams) typical
1N1206
600V
ELECTRICAL CHARACTERISTICS
Parameter
Average forward current
Maximum surge current
Maximum I²t for fusing
Maximum peak forward voltage
Maximum peak reverse current
Maximum peak reverse current
Maximum recommended operating frequency
• Pulse test: pulse width 300µsec. Duty cycle 2%
Symbol
I_F(AV)
I_FSM
I²t
V_FM
I_RM
I_RM
Value
12 Amps
250 Amps
260 A²s
1.2 Volts
10 µA
1.0 mA
10 kHz
MECHANICAL CHARACTERISTICS
Case
DO-4(R)
Marking
Alpha numeric
Normal polarity Cathode is stud, reverse polarity = anode is stud
Reverse polarity Anode is stud (add “R” suffix)
Test Condition
T_C = 170°C, half-sine wave, R_θJC = 2.5°C/W
8.3ms, half-sine, T_J = 200°C
I_FM = 30A: T_J = 25°C*
V_RRM, T_J = 25°C
V_RRM, T_J = 150°C*
DO-4(R)
Inches
Millimeters
Min Max Min Max
A - 0.078 - 1.981
B 0.422 0.453 10.719 11.506
C - 0.405 - 10.287
D - 0.800 - 20.320
E 0.420 0.440 10.668 11.176
F - 0.250 - 6.350
G - 0.424 - 10.770
H 0.066 - 1.676 -
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20121127