1N1183 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Power Silicon Rectifier Diodes, 35 A/40 A/60 A

DIGITRON SEMICONDUCTORS
1N1183-1N1190, 1N3765-1N3768
STANDARD RECOVERY RECTIFIER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Average forward current
I_F(AV)
40 Amps
Maximum surge current
Maximum I²t for fusing
I_FSM
800 Amps
I²t
2600 A²s
Maximum peak forward voltage
Maximum peak reverse current
Maximum peak reverse current
V_FM
1.19 Volts
I_RM
10 µA
I_RM
2.0 mA
Maximum thermal resistance
R_θJC
Maximum recommended operating frequency
1.25°C/W
10 kHz
Storage temperature range
Operating junction temperature range
*Pulse test: Pulse width 300µsec. Duty cycle 2%
T_stg
-65 to +200°C
T_J
-65 to +200°C
Conditions
T_C = 146°C, half sine wave, R_θJC = 1.25°C/W
8.3ms, half sine, T_J = 200°C
I_FM = 90A: T_J = 25°C
V_RRM, T_J = 25°C*
V_RRM, T_J = 150°C
Junction to case
VOLTAGE RATINGS
Part numbers
Peak reverse voltage
1N1183, 1N1183A 50V
1N1184, 1N1184A 100V
1N1185, 1N1185A 150V
1N1186, 1N1186A 200V
1N1187, 1N1187A 300V
1N1188, 1N1188A 400V
1N1189, 1N1189A 500V
1N1190, 1N1190A 600V
1N3765
700V
1N3766
800V
1N3767
900V
1N3768
1000V
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fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20121206