2N5400 Datasheet, PDF (2/3 Pages) Motorola, Inc – Amplifier Transistor(PNP Silicon)

2N5400 / 2N5401
Characteristics at T_amb=25 ^oC
Symbol
Min.
Typ.
Max.
DC Current Gain
at-V_CE=5V, -I_C=1mA
at -V_CE=5V, -I_C=10mA
at -V_CE=5V, -I_C=50mA
ST 2N5400
h_FE
30
ST 2N5401
h_FE
50
ST 2N5400
h_FE
40
ST 2N5401
h_FE
60
ST 2N5400
h_FE
40
ST 2N5401
h_FE
50
-
-
-
-
-
180
-
240
-
-
-
-
Collector Emitter Breakdown Voltage
at -I_C=1mA
ST 2N5400 ^-V(BR)CEO
120
-
-
ST 2N5401 ^-V(BR)CEO
150
-
-
Collector Base Breakdown Voltage
at -I_C=100μA
ST 2N5400 ^-V(BR)CBO
130
-
-
ST 2N5401 ^-V(BR)CBO
160
-
-
Emitter Base Breakdown Voltage
at -I_E=10μA
Collector Cutoff Current
-V_(BR)EBO
5
-
-
at -V_CB=100V
at -V_CB=120V
ST 2N5400
-I_CBO
-
ST 2N5401
-I_CBO
-
-
100
-
50
Emitter Cutoff Current
at -V_EB=3V
Collector Saturation Voltage
-I_EBO
-
-
50
at -I_C=10mA, -I_B=1mA
at -I_C=50mA, -I_B=5mA
-V_{CE sat}
-
-V_{CE sat}
-
-
0.2
-
0.5
Base Saturation Voltage
at -I_C=10mA, -I_B=1mA
at -I_C=50mA, -I_B=5mA
-V_BEsat
-
-
1
-V_BEsat
-
-
1
Gain Bandwidth Product
at -V_CE=10V,-I_C=10mA,f=100MHz ST 2N5400
f_T
100
-
400
ST 2N5401
f_T
100
-
400
Collector Base Capacitance
at -V_CB=10V, f=1MHz
Noise Figure
C_CBO
-
-
6
at -V_CE=5V,-I_C=200μA,R_G=2kΩ,f=30H_Z…15kH_Z
F
-
-
8
Thermal Resistance Junction to Ambient
R_thA
-
-
200¹⁾
1) _{Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.}
Unit
-
-
-
-
-
-
V
V
V
V
V
nA
nA
nA
V
V
V
V
MHz
MHz
pF
dB
K/W