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| 2N4402 Datasheet, PDF (2/5 Pages) ON Semiconductor – General Purpose Transistors(PNP Silicon) | |||
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2N4402 / 2N4403
Characteristics at Tamb=25 OC
Parameter
DC Current Gain
at -VCE=1V, -IC=0.1mA
at -VCE=1V, -IC=1mA
at -VCE=1V, -IC=10mA
at -VCE=1V, -IC=150mA
at -VCE=2V, -IC=500mA
Collector Cutoff Current
at -VCB=35V
Emitter Cutoff Current
at -VEB=5V
Collector Emitter Breakdown Voltage
at -IC=1mA
Collector Base Breakdown Voltage
at -IC=100µA
Emitter Base Breakdown Voltage
at -IE=100µA
Collector Saturation Voltage
at -IC=150mA, -IB=15mA
Base Saturation Voltage
at -IC=150mA, -IB=15mA
Gain Bandwidth Product
at -VCE=10V, -IC=20mA, f=100MHz
ST 2N4403
ST 2N4402
ST 2N4403
ST 2N4402
ST 2N4403
ST 2N4402
ST 2N4403
ST 2N4403
ST 2N4403
ST 2N4402
Collector Base Capacitance
ST 2N4403
at -VCB=10V, f=140MHz
Turn On Time
at -VCC=30V, -VBE=2V, -IC=150mA, -IB1=15mA
Turn Off Time
at -VCC=30V, -IC=150mA, -IB1=-IB2=15mA
Symbol
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
-ICBO
-IEBO
-V(BR)CEO
-V(BR)CBO
-V(BR)EBO
-VCEsat
-VBEsat
fT
fT
CCBO
ton
toff
Min.
30
30
60
50
100
50
100
20
20
-
-
40
40
5
-
0.75
150
200
-
-
-
Max.
-
-
-
-
-
150
300
-
-
100
100
-
-
-
0.4
0.95
-
-
8.5
35
255
Unit
-
-
-
-
-
-
-
-
-
nA
nA
V
V
V
V
V
MHz
MHz
pF
ns
ns
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