2N3904CJ Datasheet, PDF (2/2 Pages) Nanjing International Group Co – NPN silicon epitaxial planar transistor for switching and Amplifier applications

Typical Characteristics
Static Characteristic
100
COMMON EMITTER
T =25
a
500uA
80
450uA
400uA
350uA
60
300uA
250uA
40
200uA
20
0
0
1000
150uA
100uA
I =50uA
B
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE V (V)
CE
V
—— I
CEsat
C
1000
300
100
30
10
1
3000
2N3904
h ——
FE
T =100
a
I
C
COMMON EMITTER
V =1V
CE
T =25
a
3
10
30
100
200
COLLECTOR CURRENT I (mA)
C
V
—— I
BEsat
C
300
100
30
10
1
200
100
30
10
3
1
0.3
0.1
0.2
1000
300
T =100
a
T =25
a
3
10
30
COLLECTOR CURRENT I (mA)
c
I —— V
C
BE
=10
100
200
V =5V
CE
Ta=100
Ta=25
0.4
0.6
0.8
1.0
1.2
BASE-EMMITER VOLTAGE V (V)
BE
f —— I
T
C
COMMON
EMITTER
V =20V
CE
T =25
a
100
10
2
5
10
30
70
COLLECTOR CURRENT I (mA)
C
1000
T =25
a
T =100
a
100
1
10
1
3
10
30
COLLECTOR CURRENT I (mA)
C
C / C —— V / V
ob ib
CB EB
C
ib
=10
100
200
f=1MHz
I =0/I =0
E
C
Ta=25
C
ob
0.1
0.1
700
600
500
400
300
200
100
0
0
0.3
1
3
10
20
REVERSE BIAS VOLTAGE V (V)
Pc —— Ta
25
50
75
100
125
150
AMBIENT TEMPERATURE T ( )
a